IPD42 Search Results

UPD4264405

Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT juPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >iPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

NEC 424400

Abstract: NEC 424400-70 424400 60 424400 80 uPD424400 424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /IPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

ao d425

Abstract: d425
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000AB72F 2 M-W ORD BY 72-BIT DYIMAMIC RAM MODULE FAST PAGE M O DE ECC Description The M C-422000AB72F is a 2,097,152 w ords by 72 bits dynam ic R A M m odule on which 9 pieces of 16 M D R A M : /iPD4217800 are assembled.

K1537

Contextual Info: NEC NEC Electronics Inc. Description The ¿/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are power supply voltage + 5 V or

Contextual Info: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000AB72F 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000AB72F is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM: /iPD4217800 are assembled. This module provides high density and large quantities of m em ory in a small space w ithout utilizing the

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /iPD42S18160L are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M C-421000AA64FA 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA64FA is a 1,048,576 words by 64 bits dynamic RAM module on which 16 pieces of 4 M DRAM: /iPD424400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 1 6 4 0 5 16 M BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD4216405 is a 4,194,304 words by 4 bits dynamic CM OS RAM w ith optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT /iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e ¿ P D 42S16400L, 4 21 6 4 0 0 L , 4 2 S 1 7 4 0 0 L , 4 2 1 7 4 0 0 L a re 4 194 3 0 4 w o r d s b y 4 b its d y n a m ic C M O S R A M s .

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-428000A32, 428000A36 SERIES 8 M-WORD BY 32-BIT, 8 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-428000A32 series is a 8,388,608 w ords by 32 bits dynam ic RAM m odule on w hich 16 pieces of 16 M DRAM: /iPD4217400 are assembled.

nec 11

Contextual Info: jW /X V * W M -J W NEC E lectronics Inc. Description #iPD424101 4,194,304 X 1-Bit Dynamic CMOS RAM Pin Configurations The pPD424101 is a nibble mode dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DRAM : /iPD4218160 are asse m bled .

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264805, 4265805 64 M-BIT DYNAMIC RAM 8M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /iPD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

PD42S4400

Abstract: NEC 424400-70 77ti NEC 424400 uPD424400 NEC 424400-60 424400-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jitP D 4 2 S 4 4 0 0 , 4 2 4 4 0 0 4M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D escription The |iPD42S4400. 424400 are 1,048,576 words by 4 bits C M O S dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 2 1 8 0 5 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /iPD421805 is a 131,072 words by 8 bits CMOS dynamic RAM with optional hyper page mode (EDO).

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AC72F is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: /iPD4216400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

PD4264805G5-A60-7JD

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /iPD42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

SL680C

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

D42S17800-70

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 4264160, 4265160 64 M BIT DYNAMIC RAM 4M -W O R D BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

4216100

Abstract: 4216100-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They