0P593 Search Results

cm211

Abstract: OP593 OP593A OP593B OP593C OP598 OP598A OP598B OP598C 11Milli
Contextual Info: .OPIEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN silicon phototransistors molded in dark

OP593A

Abstract: OP598B 0P598 OP593 OP593B OP593C OP598 OP598A OP598C
Contextual Info: @.QEIEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN silicon phototransistors molded in dark

Contextual Info: @ .O P IE K Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features • Wide irradiance pattern • Significantly higher power output than GaA s at equivalent drive currents • T-1 3/4 package style

0P2938

Abstract: WT 5072 00D0135 0P298 OP293C OP298 OP298D optek and 1983
Contextual Info: O P T E K T E C H N O L O G Y I N C O b E D | b 7 ci a S â ü Q 0 D D 1 3 a fl 77KV O p to e le c tro n ic s . D iv is io n T R W Electronic Com ponents Group T - m - | a Product Bulletin 5 0 72 January 1985 G a A IA s Plastic Infrared Em itting Diodes T y p e s

CI 4016

Abstract: CI 4011 mml 600 ZS 1032 OP231TX OP231TXV OP232TX OP232TXV OP598
Contextual Info: OPTEK TECHNOLOGY INC ObE D | b7TflSÔ0 DOOOM1M 7 | g Op to e le c tro n ic s D iv is io n TRW Electronic Components Group M T f l & a i *M Product Bulletin 5062 High R e liab ility G a A IA s Infrared Em ittin g Diodes Types O P 2 3 1T X , O P 2 3 1T X V , O P 23 2 TX, OP232TXV

OP295

Contextual Info: 0 . OPTEK Product Bulletin O P295 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP295, OP296, OP297 Series Features • Narrow irradiance pattern • Significantly higher power output than GaAs at equivalent drive currents • Wavelength matched to silicon’s peak

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

alfa uv

Abstract: trw 100 ld 5062 ZS 1032 OP231TX OP231TXV OP232TX OP232TXV OP598 0P800
Contextual Info: OPTEK TECHNOLOGY INC ObE D g b7TflSaa DODOMm 7| O p to e le c tro n ic s D iv is io n — T R W Electronic Com ponents G roup g M i k W W Product Bulletin 5062 January 1985 T - M H 3 High Reliability G a A IA s Infrared Em itting Diodes

OP290

Abstract: FTH A 001 26 10 OP290A OP290B OP290C OP291 OP291B OP291C OP292
Contextual Info: OPTEK Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e no ted • Wide irradiance pattern • Significantly higher power output than

Contextual Info: O P T E K T E C H N O L O G Y I N C Q b E D | b T T f l S Ô Q 0 0 0 Q 1 3 E Û | O p to e le ctro n ics. D iv is io n T R W Electronic Components Group froduct Bulletin 50 72 January 1985 G a A IA s Plastic Infrared Em itting Diodes Types OP293C, B, A , OP298D, C, B, A

OP295

Abstract: 0P297 mml 600 OP295A OP295B OP295C OP296 OP296A OP296B OP296C
Contextual Info: OPTEK Product Bulletin OP295 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP295, OP296, OP297 Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • N a rro w irra d ia n ce p attern R e ve rse V o lta g e O P 2 9 5 .

OP295

Abstract: OP295C AXP 188 OP295A OP295B OP296 OP296A OP296B OP296C OP297
Contextual Info: 0 . OPTEK Product Bulletin OP295 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP295, OP296, OP297 Series .310 7.87 .290 (7.37) * FOR IDENTIFICATION PURPOSES. ANODE LEAD IS .060 (1.52) NOM. LONGER THAN CATHODE LEAD. •.040 (1.02) .245 (6.22) .225 (5.72)

OP295

Abstract: P297A P295C
Contextual Info: .O P I E K Product Bulletin OP295 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP295, OP296, OP297 Series N O TE 12 D IM E N S IO N S A R E IN IN C H E S (M IL L IM E T E R S ) Features Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

OP290

Abstract: 0P296 OP290A OP290B OP290C OP291 OP291C OP292
Contextual Info: OPTEK Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features Absolute Maximum Ratings T a = 2 5 ° C unless o th e rw is e noted • Wide irradiance pattern • Significantly higher power output than

OP593B

Abstract: OP593 OP593A OP593C OP598 OP598A OP598B OP598C
Contextual Info: 0 . OPTEK P ro d u c t B u lle tin O P 593A J u n e 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series .230 5 .8 4 .210 ( 5 .3 3 ) QP593 I 1 .190 ( 4 .0 3 ) . 17B ( 4 .5 2 ) r, V COLLECTOR / MEASUERMENT SURFACE 030 ( 0 .7 6 ) — COLLECTOR-

Contextual Info: OPTEK TECHNOLOGY INC DbE D | b7TflSaD O D O O M m 7 | mmM Optoelectronics Division T R W Electronic Com ponents Group g j Ê y L W W Product Bulletin 5062 January 1985 T - M i - 1 3 High Reliability GaAIAs Infrared Emitting Diodes Types OP231TX, OP231TXV, OP232TX, OP232TXV