0G047 Search Results

THYRISTOR br 403

Abstract: SIEMENS THYRISTOR thyristor 808 BR403
Contextual Info: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications

3004x

Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

Contextual Info: 6ENL INSTR/ PO WE R 3flE D • BÛ'iDia? 0G047CJ3 M M ü I C T-03-15 .P * R » E * L * I » I VI ♦ l » I M * A » R » Y » ♦ ♦ • • ♦ SS29 AND SS2B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 90 and 100 Volts CURRENT - 2.0 Amperes

s 6307

Abstract: led color green
Contextual Info: 2fllEb?S 0G04757 4Tb 4mm, Flat Top LED CBP Circuit Board Indicator Sloped Back Housing Dìa light 550-6x07 LED COLOR LED DATA SHEET G ree n D iffused Y e llow D iffu se d Red D iffused 521-9708 521-9707 521-9706 PART NO. HIGH EFFICIENCY 550-6207 550-6307 550-6407

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

S5590

Contextual Info: A a Si PHOTODIODES r-^tvî-iîMŒ! S-10. Si Photodiode with Built-in Pre-amp TE-cooledTyp Large area ( 1 0 x 1 0 mm , low noise, high stability The S6204 is a TE-cooled Si photodiode with operational amplifier for lowlight-level detection, e. g. spectrophotometry, NOx sensor. This integrates

G5832

Contextual Info: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­

P4488

Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

Contextual Info: Lattice GAL16LV8ZD Low Voltage, Zero Power E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • 3.3V LOW VOLTAGE, ZERO POWER OPERATION — JEDEC Compatible 3.3V Interface Standard — Interfaces with Standard 5V TTL Devices

1000Amperes

Abstract: DIODE 6AT
Contextual Info: P 0 ÜJEREX m a I NC m D a • TSTMbSl _ Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 D0ÜM771 M HPRX ID221KA2 * T -31-31

ID221K05

Contextual Info: PO WERE X INC m /v B'îE D e u • TERHbSl x G0 D 47Ô 3 G * P R X ID 221K05 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex, Europe, S.A. 428AvenueG. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ' -T - 3V 3( IGBTMOD

Contextual Info: ASA H I KASEI [AK2392 /• ASAHI KASEI = PREL IMI NARY = ufi Ge neral AK 2 3 9 2 Shift QPSK IfODEI for Digital Cordless Telephone D e s c r i p t i o n The AK2392 is a MODEM LSI for a digital cordless telephone which conforms to the second generation cordless telephone system standard STD-28 of RCR (Japan).

Contextual Info: INT ERN AT IO NAL RECTIFIER 4T Dl F 4f i554S2 0004744 S Data Sh eet No. PD-3.067 IN T E R N A T IO N A L R E C T I F I E R I O R -r*ss-£Q 1410A, 1 100A RMS Hockey Puk Thyristors 900PE, 700PE SERIES Description The 700PE and 900 P E series o f converter type hockey puk thyristors

2388 jrc

Abstract: jrc 2368 2388 84 JRC 700PE20 900PE20 RS-397 700PE120
Contextual Info: INTERNA TIO NAL RECTIFIER MT dËTJ 4 0 5 5 4 5 2 D004744 Data Sh eet No. PD-3.067 IN T E R N A T IO N A L IOR R E C T IF IE R - T - S S ' - A O 1410A, 1100A RMS Hockey Puk Thyristors 9 0 0 P E , 7 0 0 P E S E R IE S Description The 700PE and 900PE series of converter type hockey puk thyristors

Contextual Info: EL21T0C/EL2270C/EL2470C Tu MHz ' / m 1 'urn n i Wwir F niiback Ampli fit rs wm^ B W B HîGH PERFORMANCEANALOGINTEGRATEDCtâCUfTS F e a tu r e s G en era l D e sc r ip tio n • Single (EL2170C , dual (EL2270C) an d quad (EL2470C) topologies • 1 m A supply curren t (per

Infrared photodiode preamplifier

Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.

Contextual Info: -HYUNDAI H Y 5 1 1 8 1 6 0 S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: Lattice G A L 1 6 L V 8 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from C lock Input to Data Output

thermistor inas

Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Contextual Info: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.

po111

Contextual Info: MICRO POWER SYSTEMS INC LIE ]> • bDT7444 D004770 331 « M P S - „ 5 -1 -\<2>-\ î> MP8795 CMOS Very Low Power 10-Bit Analog-to-Digital Converter Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution

Contextual Info: CMOS DOT MATRIX HIGH DUTY LCD DRIVER • • • • CMOS 86-bit Common Driver High Voltage Resistant Output Max 1/300 in Display Duty CMOS High Voltage Resistant Process • DESCRIPTION The SED1632 is an 86 output dot matrix LCD common row driver for driving a high-capacity LCD panel at

pr 8501 b

Abstract: P394A P3226-02 P3226 PBS P394 series
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

P4115

Abstract: B1919 G5832-11
Contextual Info: PbSe Photoconductive Detectors Capable of detecting to 5 fim range TE-cooled types • High-speed response • Operates at room temperature Compared to other types of detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at