0DQ15 Search Results

0DQ154Q

Contextual Info: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il

Contextual Info: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance

Contextual Info: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

Contextual Info: DS1758Y DALLAS s e m ic o n d u c to r _ DS1758Y 3-V olt Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power OBJ • Data is automatically write protected during power loss 1 1 40 1

PC28F256P33

Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

Contextual Info: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a ­

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

pc28f00ap30

Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

Contextual Info: “HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

pc28f00ap30

Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

JS28F256P33

Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Contextual Info: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

JS28F320C3

Contextual Info: Intel Advanced+ Boot Block Flash Memory C3 28F800C3, 28F160C3, 28F320C3 (x16) Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V– 3.6 V read/program/erase — 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O

Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

Contextual Info: DENSE-PAC 4 MEGABIT FLASH EEPROM M ICROSYSTEM S D P Z 1 2 8 X 3 2 V I/D P Z 1 2 8 X 3 2 V IP DESCRIPTION: The D P Z 128X32VI/VIP is a 4 megabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH

JS28F512P33BF

Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

smj55161

Contextual Info: SMJ55161 262144 BY 16-BIT MULTIPORT VIDEO RAM SSMS056D - MAY 1995 - REVISED OCTOBER 1997 Organization: - DRAM: 262 144 by 16 Bits - SAM: 256 by 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to

Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS0S7C - APRIL 1998 - REVISED JUNE 199? Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256 Words x 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to

ee1625

Abstract: C254D 3D47T
Contextual Info: KM416C254DT ELECTRONICS CMOS DRAM 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: — — Am29DL800T/Am29DL800B A M D il 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from

PC28F256P30BF

Abstract: PC48F4400P0VB0E JS28F256P30 RC28F256P30TF Numonyx TE28F256P30BF PC28F256P30 JS28F256P30tf PC48F PF48F
Contextual Info: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits

PC28F00AP30TF

Abstract: PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30
Contextual Info: Numonyx Axcell™ P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E » Tobase? aoQissb t P3C31982/L SUPER FAST 16KX 4 STATIC CMOS RAM SCRAM FEATURES Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation Three-State Output Separate Inputs and Outputs - P3C31982/L Outputs In High ZDuring Write