0DDB Search Results

Contextual Info: SOLID STATE DEVICES INC PRELIMINARY DATA SHEET 5-1-85 1BE -D |fi3bbDll 0DDB0b3 b | T " 33 06 - SFT6800 3 AMP HIGH VOLTAGE NPN TRANSISTOR 800 VOLTS CASE STYLE W JEDEC TO—5 " 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807

2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

1S2473

Abstract: 1S2471 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt 1S2787 SC-40
Contextual Info: # -f ^ — K /D io d e s ROHM CO LTD 1S2471 /1S2472/1S2473/1S2787/1SS41 40E D n 7020=]=]=] 0DDb4fiS 1 S 3 RHfl 1S2471/1S2472/1S2473 1S2787/1SS41 7: 03-0 9 y IJ 3 > X fcfii + v t - K Silicon Epitaxial Planar High-Speed Switching Diodes • iiJ I: • ^ i-ffi^ììlS l/D im e n s io n s Unit : mm

Contextual Info: SbE ]> • TT7057Ô 0DDbT37 730 « Z E T B ZETEX TABLE 5 : NPN LOW NOISE SEMI CONDUCTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications.

6724

Abstract: B754 87424
Contextual Info: O K I SEMI CONDUCTOR GROUP ö l D E § t>7242MD ; ,6 7 2 4 2 4 0 O K I SEMICONDUCTOR GROUP . 89D 0 2 7 3 4 D 7 L ¥ £ '2 3 '/7 l l l k l s e m i c o n d u MSC2310YS9/KS9 c t o 0DDB73M r _ _ 1,048,576 BY 9 BIT DYNAMIC RAM MODULE

OTP-e

Abstract: TEMIC NEC protocol
Contextual Info: ' • SôbôMSb 00übD32 EI D WM T e m ic TSS461C Semiconductors Vehicle Area Network Data Link Controller 1. Description Cost optimization in car manufacturing is of extreme importance today. Solutions to this problem often implies the use of more advanced and intelligent electronic circuits.

MHS CMS

Contextual Info: C TSC8051A30 S e m i c o n d u c t o r s CMOS Single Chip 8-bit Microcontroller with VAN Controller Description The TSC8051A30 is a stand alone, high performance CMOS microcontroller designed for use in automotive and industrial applications. The TSC8051A30 retains all features o f the MHS 80C51

MN41256-12

Abstract: MN41256-15 MN41256 41256-15 IR511 SFE 10.7 MX MN4125 FA-135
Contextual Info: P ANA SO NIC 6932852 IN DL/ELEK P A NA S ON I C -CIO 72 Î ËJ 1,^32852 0G[lb353 □ J ~ IND L.ELECTRON IC" . 72C 06353 t D 7 - 'fi- 2 î- tS' M M N 4 1 256-12, MN41256-15 MN41 256-1 2 , MN41 256-1 5 262,144 tr-y h N M O S ¥ < t S ' y # R A M 2 6 2 ,1 4 4 -B it N M O S Dynamic RAM

135055

Abstract: 2sc828a D 711 N 60 T MN8201SW panasonic MN8201sw a7z transistor
Contextual Info: PANASONIC INDL/ELEK -CICJ 72 6 9 3 2 8 52 P A N A S O N I C DE'Jb'jaafiSa [I00L.701 & J - I N D U E L E C T R O N IC_ 7 2C 0 6 7 0 1 .D y-41 -55 MN8201SW zyy M N8201SW C P D E l f t í U t S I ^ / C P D C H A R G E P R IM IN G D E V IC E S o lid -S ta te

50E30

Contextual Info: Preliminary IM P 50E 30 EPAC Programmable Monitoring and Diagnostic 1C Electrically Programmable Analog Circuit Introduction The IM P5 0 E3 0 is a programmable IC offering a variety o f m onitoring, diagnos­ tic and data-acquisition capabilities. Its operating modes increase system

G530T

Contextual Info: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a

HY628400LP

Contextual Info: HY628400-I Series 'H Y U N D A I 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HBI 00 - 02

Abstract: K1604 L03A MN2364
Contextual Info: PANASONIC 6 ^ 3 2 8 5 2 P A N A S O N IC INDL/ELEK -CIO 72 d e § ^ 3 2 0 5 2 72 C 0 6 2 8 5 I N D L ♦E L E C T R O N I C o o o b 2 ö s =1 I? M N2364 MN2364 'y h N M O S 7 7 ^ 7 ° □ ^ ' 7 7 7 ' ^ 6 5 ,5 3 6 t RO M 65,536-Bit N M O S Mask P ro g ra m m a b le ROM

Contextual Info: im iC n T R L Y S T Preliminary u r n a il S E M I C O N D U C T O R CAT33C804A 4K-Bit Secure Access Serial E2PROM FEATURES • Single 3V Supply Commercial and Industrial Temperature Ranges ■ Password READ/WRITE Protection: 1 to 8 Bytes 100,000 Program/Erase Cycles

TIL32

Abstract: 80196 sample programs sab 80c196
Contextual Info: Programmable Peripheral PSD5XX Family Field-Programmable Microcontroller Peripherals Preliminary Key Features □ Complete family of Field Programmable Microcontroller Peripherals enables the user to efficiently implement a highly integrated embedded control system in a short time. The

Contextual Info: MP7690A CMOS Programmable Input Range 8-Bit High Speed Analog-to-Digital Converter FEATURES BENEFITS • • . • • • • • • • • Reduced Board Space Small Package and Reduced External Parts • No External Sample/Hold Needed, Reducing System Cost and Improving Ease of Design

ITT DIODE 125

Contextual Info: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA

schematic diagram UPS inverter three phase

Abstract: 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram
Contextual Info: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

HY53C464LS

Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Contextual Info: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

GMM7324

Abstract: GMM73241 GMM7324100BNS
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7324100BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7324100BNS/SG is

K250 capacitor

Abstract: DNR2
Contextual Info: @ LG Semicon. Co. LTD. Features Description The GMM7322010ES/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The G M M 7322010ES/SG is

Contextual Info: Bt9021 D istinguishing Features 135 M H z Pipelined Operation 1:1, 4:1, or 5:1 M ultiplexed Pixel Ports Pixel Pan Support Frame B uffer Interleave Support Triple 8-bit D/A Converters 256 x 24 Dual Port Color Palette 4 x 24 Dual Port O verlay Registers R S-343A -C om patible O utputs

Contextual Info: PF835-02 EPSON SED152A Dot Matrix LC D Controller Driver • Ultra Low Power Consumption • Built-in Video RAM • OVERVIEW The SE D I 52A family of dot matrix LCD drivers are designed for the display of characters and graphics. The drivers generate LCD drive signals derived from bit mapped data stored in an internal RAM.

Contextual Info: NJ U 6 4 5 3 A 80 OUTPUT BIT MAP LCD EXTENSION G E N E R A L D E S C R I P T IO N T h e N JU 6 4 5 3 A i s PACKAGE O U T LIN E a 80 o u t p u t b i t map LC D e x t e n s i o n d i v e r t o d is p la y g ra p h ic s I t c o n ta in s DRIVER o r c h a r a c t e r s c o m b in e