0DD353 Search Results

Contextual Info: m icro n M INC technology SSE D b l l l S m 0003S3G bfiM • MRN ADVANCE MT5LC2561 256K X 1 SRAM IC R O N 256K X 1 SRAM LOW VOLTAGE FEATURES • High speed: 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

LM339s

Abstract: OP07S AN7912 1N5817 SPT7912 lN4755
Contextual Info: @ S P SPT7912 T 12-BIT, 30 MSPS, ECL, A/D CONVERTER S'CNAL PROCESSM6 TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 65 dB SNR @ 1 MHz Input On-Chip Track/Hold Bipolar ±2.0 V Analog Input

IN2804

Contextual Info: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.

panasonic CR1632

Abstract: bq4285E CR1632 battery CR1632 bq4287E
Contextual Info: bq4287E f e j BENCHMARQ Enhanced RTC Module With NVRAM Control Features >- D irect clock/calendar replacem ent for IBM ^ AT-compatible com puters and other applications >- 114 bytes of general nonvolatile storage ► E nhanced features include: - System w ake-up capability—