MT5LC2561 Search Results

Contextual Info: MT5LC2561 256K X 1 SRAM M IC R O N SRAM 256K X 1 SRAM LOW VOLTAGE • AU I / O p in s a re 5V to leran t • H ig h sp eed : 1 2 ,1 5 ,2 0 , 25 a n d 35n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • S in g le + 3 .3 V + 0 .3 V p o w er su p p ly

Contextual Info: m icro n M INC technology SSE D b l l l S m 0003S3G bfiM • MRN ADVANCE MT5LC2561 256K X 1 SRAM IC R O N 256K X 1 SRAM LOW VOLTAGE FEATURES • High speed: 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: MT5LC2561 2 5 6 K X 1 SRAM I^ IC R O IM 256K x 1 SRAM SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • All I/O pins are 5V tolerant • High speed: 12,15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: MICR ON S E M I C O N D U C T O R INC p i c n o b?E D • b l l l S M 11! 0 0 0 ^ 42 1 134 ■ MRN MT5LC2561 256K X 1 SRAM N SRAM 256K X 1 SRAM LOW VOLTAGE FEATURES W • All I / O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-perform ance, low-power, CM OS double-m etal

Contextual Info: ADVANCE MT5LC2561 256K X 1 SRAM p ilC R O N 256K X 1 SRAM LOW VOLTAGE FEATURES • High speed: 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE option • All inputs and output are TTL compatible

Contextual Info: MT5LC2561 256K X 1 SRAM M IC R O N SRAM 256Kx 1 SRAM LOW VOLTAGE • All I/O pins are 5V tolerant • High speed: 12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE option

Contextual Info: MICRON SEM ICO NDUCTOR INC b'IE D • blll54T □ □□Tia'I 141 H M R N 256K SRAM 1DIE SEMICONDUCTOR, INC- SRAM DIE 256K SRAM 256K X 1, 64K X 4, 32K x 8 FEATURES • • • • DIE OUTLINE Top View Single 5V or 3.3V power supply All I/O pins are 5V tolerant

Contextual Info: PRELIMINARY S12C 256K SR A M D IE MICRON ft- n u —.m¡T. we. SRAM DIE 256K SRAM 2 5 6 K X 1, 6 4 K x 4 , 3 2 K x 8 FEATURES • Single 3.3V ±0.3V power supply 3.3V ±0.2V for 12ns and faster • 5V -tolerantI/0 • Common data inputs and data outputs (separate data