0D347 Search Results

Contextual Info: TO SHIBA TC74VCX16374FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16374FT LOW-VOLTAGE 16-BIT D-TYPE FLIP-FLOP WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16374FT is a high perform ance CMOS 16-bit D-TYPE FLIP FLOP. Designed fo r use in 1.8, 2.5 o r 3.3 V o lt

RMHA

Abstract: 0G347 tl1c
Contextual Info: TEXAS INSTR ÎLIN /IN TF C 3- SS dË J 0 9 61 72 4 TEXAS INSTFT LIN/INTFC 0 ^ 1 7 2 4 DG347M3 _55C l 34743 T 'S - i- ll DATA ACQUISITION CIRCUITS TYPES TL182, TL185, TL188, TL191 BI-MOS SWITCHES D2234, JUNE 1976-REVISED OCTOBER 1983 Functionally Interchangeble with Siliconlx

BDT65

Abstract: bot65a BDT64 BDT64A BDT64B BDT64C BDT65B 5A pnp to 220
Contextual Info: J BDT65; 65A BDT65B; 65C ^ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T 0-22 0 plastic envelope. PNP complements are

44-PIN dice

Abstract: HV8308DJ
Contextual Info: S U PE RT EX INC LIE J> 07732^5 0 D G 3 M 74 7 2 S STX H V83 H V 84 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device Recommended Operating Vpp max 44 J-Lead Quad Ceram ic Chip Carrier 44 J-Lead Quad

IC07

Abstract: KM44C1000D KM44V1000D
Contextual Info: KM44V1000DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Rags Mode CMOS DRAMs. Fast Pag Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

BDT63

Abstract: BDT62
Contextual Info: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,

Contextual Info: BDT63F; BDT63AF BDT63BF; BDT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed fo r audio output stages and general amplifier and switching applications.

BDT85

Abstract: BDT81 BDT88 BDT84 BDT87 BDT82 BDT83 BDT86
Contextual Info: J BDT81; BDT83 BDT85; BDT87 ^ SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T0-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.

bot64

Abstract: BDT65A BDT64 BDT65C BDT64B BDT65B DT6-4 64a diode BOT65
Contextual Info: BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P N P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T O -220 plastic envelope. N PN complements are BOT65,

D931C

Contextual Info: A123456789ABCDCEFCAACBFB A A 83A181 1234546789A88BC728DEFD 25472888A8DEFD  F3 !" 1#$% &'3&9D7 936B62 9C26D7 3 !"

PAL16l8 MMI

Abstract: pal16r8b PAL16R8 MMI AMD 16L8 PAL16R4
Contextual Info: COM’L: -4/5/7/B/B-2/A, D/2 MIL: -10/12/B/B-2/A/B-4 Advanced Micro Devices PAL16R8 Family 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 4.5 ns maximum propagation delay ■ Power-up reset for initialization ■ Popular 20-pin architectures: 16L8,16R8,16R6,

Contextual Info: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

35n120

Abstract: IXLH35N120A 35N120A 35n120 IGBT
Contextual Info: IXLH 35N120 A VCES High Voltage, High speed IGBT = 1200 V = 58 A = 3.6 V ^C25 V CE sat Short Circuit SOA Capability P re lim in a ry d a ta Maximum Ratings Symbol Test Conditions v CES T j = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C;1 RGE „ = 1 M fi

KM44C1000D

Abstract: KM44V1000D
Contextual Info: K M 4 4 V 1OOODT ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: K M 4 4 V 1OOODT ELECTRONICS CMOS DRAM 1M x 4 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

BDT62B

Contextual Info: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,