0D177 Search Results

Contextual Info: H I T A C H I / LOGIC/ARRAYS/HEM SIE ]> • 44Tb2ü3 0D1774M 42^ ■ H I T 2 HN62438N Series- Preliminary 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62438N Series is an 8-Megabit CMOS Mask Programmable Read Only Memory organized either as 524,288 x

FCN-745Q

Abstract: FCN-740
Contextual Info: FCN-745Q*-L/ZZ FCN-748Q050-L/ZZ SMT DIMENSIONS 4.7 Mounting Hole Layout 2 ± 0.2 FCN-748Q050-L/ZZ - 40 position also available 4-40 37 4T 7 5 b 0D17732 STT October 1991 FUJITSU Edition 1.0 DATA SHEET FCN-745Q *-L/ZZ FCN-740 SERIES SIGNAL/POWER CONNECTORS

SC141

Abstract: SC141B SC146D SG141D SG-141 SC146 SC146 Series SC146M SC141E SC146B
Contextual Info: G E SOLID STATE 3875081 □1 G E SOLID STATE DE I BflTSDfil 0D177AS 0 01E 17785 D '- t 3 T rla c s _ SC141, SC146 Series File Number 1167 6-A and 10-A Silicon Triacs Three-Lead Plastic Types for Power-Control and Power-Switching Applications

Contextual Info: MSE T> m T0T72S0 0D177b3 2 « T O S M TOSHIBA TRANSISTOR 2N4401 SILICON NPN EPITAXIAL TYPE PCT PROCESS T - ^ i -7 3 TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FE A T U R E S: . Low Leakage Current : Iç£v=100nA(Max.)* lBEV=-100nA(Max.)

M5M4V4400-7

Abstract: M5M4V4400
Contextual Info: blE ]> • b2MTflE5 0D1774Q 037 ■ M I T I M 5 M MI T S U B I S H I 4 V 4 4 MITSUBISHI LSIs J , L , T P , R T - 6 , - 7 , - 8 , -6S.-7S.-8S M E M OR Y/ AS IC FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 4 - bit dynamic RAMS,

P2A26

Abstract: SHARP GP2A22 P2A25 GP2L20L GP2L23L GP2A20 P2A22 P2A27 P2L23 P2S3
Contextual Info: aiflO?* 0D1777Ö b3Q PHOTOINTERRUPTER New product PHOTOINTERRUPTERS <Reflective type> 1 ( "OPIC" (Optical IC) is tradem ark of the SHARP Corporation. An OPIC consists o f a light-d e te c tin g elem e nt and sig nalprocessing circuit integrated onto a single chip

2N6342A

Abstract: 2N6343A 2N6345A 2N6346A 30367 2N6344A 2N6347A 2N6348A 2N6342A-2N6349A JC22
Contextual Info: G E SOLID STATE □1 01E 17756 3875081 G E SOLID STATE File Number D E | 3fi750Al 0D177SL 4 D T - _ Triacs 1084 2N6342A-2N6349A Series 12-A Silicon Triacs TERMINAL DESIGNATIONS For Pow er Control and Pow er-Sw itching Applications

SRAM timing

Contextual Info: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­

ic tba 220

Abstract: km6161002j KM6161002-17
Contextual Info: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)

dilmon 28

Abstract: transistor DA 218
Contextual Info: be!E D • 37bfi522 DD1770R RflO m P L S B PSLU4I G E C P L E S S E Y GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2349-2.2 ULA DA SERIES ANALOG/DIGITAL MIXED SIGNAL ARRAY FAMILY Supersedes June 1990 Edition The ULA DA Series is a family of 8 arrays developed to

jedec package TO-243AA

Abstract: G0177
Contextual Info: INTERNATIONAL RECTIFIER bSE ]> 4655452 OOlTb'H 122 * I N R Data Sheet No. PD-2.176 INTERNATIONAL RECTIFIER X O R 10J SERIES 1 Amp Surface Mount Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics 10J 'F A V 1.0 A @ Max. T ^ 31

Contextual Info: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

3 phase ac motor speed control

Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
Contextual Info: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to

Contextual Info: u im TECHNOLOGY [ Ê ilU M S E Final Electrical Specifications LTC1522 Micropower, Regulated 5V Charge Pump DC/DC Converter June 1997 F€RTUR€S DCSCRIPTIOn • Ultralow Power: Typical Operating Ice = M ■ Short-Circuit/Thermal Protected ■ Regulated 5V ±4% Output Voltage

18-PIN

Abstract: 26-PIN ZIP20-P-400 MSM OKI
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The

STR06

Contextual Info: MITSUBISHI M E M O R Y / A S I C blE D • b 2 4 cifiSS O O l V b ? 1* 5 3 ^ ■ M I T I M ITSUBISHI L S Is M 5 M 4 V 4 2 6 0 J , L , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM \T A f i

2N5754-2N5757

Abstract: 2N5754 RCA Triacs 2N5756 2N5757 rca triac 2N5755 E03G RCA TO-205
Contextual Info: G E SOLI» STATE 3875081 G E 01 SO LID STATE D E | 3Û7SG01 00177SS 7 | ~ 01E 17752 Triacs 2N5754-2N5757 File Number 414 2.5-A Silicon Triacs Features: • ■ ■ ■ Gate sen sitivity - 25 mA di/dt cap ab ility -1 0 0 A /fis L o w sw itch in g lo sse s Low -on-state voltage at high cu rren t levels

FCN-810

Abstract: FCN815P002 FCN-813J002-D FCN-813J FCN-815P004-TD TD 346 FCN-814P016 12-WAY D 471 FCN-815P020-TG
Contextual Info: February 1992 Edition 1.0 DATA SHEET : FUJITSU FCN-814P/815P*-t, -813J FCN-810 Series Connectors HrHrHr He • Mounted height from PC board is only 9.5 mm 0.374 in. • Fully shrouded plug ensures strong resistance to external force when coupled with the socket, and protects contacts

CKE50

Contextual Info: CMOS LSI SA0YO LC382161 AT -10/12/15 2 MEG 65536 Words X 16 Bits X 2 Banks Synchronous DRAM Target Specifications Overview The LC382161AT product is a 3.3V single-voltage power supply Synchronous DRAM (SDRAM) with a 65536-word x 16-bit x 2-bank organization. This SDRAM features a large capacity, high speed, and low

Contextual Info: SONY C X P 8 1 1 P2 4 CMOS 8-bit Single Chip Microcomputer Description The CXP811P24 is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit CPU, PROM, RAM

pg7a

Contextual Info: CXP80P624Ä1 SONY. CMOS 8-bit Single Chip Microcomputer Description The CXP80P624A is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface 2-ch independently , timer/counter, time base timer, vector interruption, high precision timing pattern generation

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

hp 530 charging CIRCUIT diagram

Contextual Info: r r u r m TECHNOLOGY _ LTC1479 PowerPath C ontroller fo r Dual B attery Systems F€flTUft€S DCSCRICTIOn • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup ■ Compatible with Li-Ion, NiCd, NiMH and Lead-Acid

Contextual Info: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz