V103 TRANSISTOR
Abstract: BUZ80A T0220AB V103 buz80
Contextual Info: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in
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buz80a_t0220abbuz80a00mss5+4t-39-11v103 transistorv103buz80
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S0014
Abstract: C67078-A1701-A2
Contextual Info: I aaD D • ö 2 3 5 b os 88D Gomsia 14918 D r o ? m s i z G -^ / 3 BUZ 214 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage yBS => 500 V Continuous drain current /0 = 7A Draln-source on-reslstance /7DS on = 0,8 £2
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buz90
Abstract: BU790 transistor buz90 ti211 T0220AB buz90n buz-90
Contextual Info: PowerMOS transistor_ BUZ90_ N AMER PHILIPS/DISCRETE OLE D • 1^53131 0D14S51 T ■ i May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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buz900014s51t0220abt-39-11+5bu790transistor buz90ti211buz90nbuz-90
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