0D02D Search Results

Contextual Info: Data Sheet October 1993 m A T& T '^ ^ ^ M ic ro e le c tro n ic s MH005-Series Power Modules: 4.5 Vdc to 14 Vdc Inputs; 5 W Features • Small size: 2.00 in. x 1.10 in. x 0.46 in. ■ Wide 3:1 input range ■ Output current limiting ■ High efficiency: 73% typical

15R06

Contextual Info: FS 15 R 06 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,26 DC, pro Zweig / per arm 1,56 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 15 A lc °C/W °C/W

Contextual Info: _ bq2201 BENCHMARQ SRAM Nonvolatile Controller Unit Features General Description >• Power monitoring and switching for 3 volt battery-backup applications The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard

ed188130

Abstract: EDI88130CS25CB EDI88130CS20TB EDI88130CS OD020
Contextual Info: EDI88130CS ^EDI Electronic Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: FS 15 R 06 KF 2 T ra n s is to r T ra n s is to r E le k tris c h e E ig e n sch a fte n E le c tric a l p ro p e rtie s Hochstzulässige W erte Maximum rated values 600 V C ES T h e rm is c h e E ig e n sch a fte n T h e rm a l p ro p e rtie s DC, pro Baustein / per module

2N5015

Abstract: 2n5095 transistor 2N5 2n5097 2N5010 2N5012 2N5013 SFT102 A316E 2N509
Contextual Info: SOLID STATE DEVICES INC 1 EE D Jfi 3 bbDll □ □□SD'H 1 Preliminary Data Sheet - 1— SFT102 | _ f\q = - SSDI 0.5 A M P H I G H V O L T A G E NPN TRANSISTOR 450 V O L T S cz^se: s t y l e t o — 5 9 ALL TERMINALS ISOLATED FROM CASE 14830 VALLEY VIEW

1RFP250

Abstract: IRFC250 1rfp254 IRF254 085n IRF250 2N6765 2N6766
Contextual Info: 4686226 I X Y S CORP 03 ¡j 4t.0fc.22Li □0D02Dfl □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a RDS(on) -

Contextual Info: "X ni C R o s E n i c o r p ste d • MicrasemiCorp. sa rrrsD A i.f. a 7. hoi m u re in lo rm a lio n udlt. s.4 \ ia a \a . ca N- bii s at s a a a a a s T 7Mb ■ n 5KP5.0 thru 5KP110A &02 941-fOOO FEATU RES Designed for use on the output of switching power supplies, voltage tolerances

GAL20XV10B-20LP

Abstract: ali 1631 GAL20XV10B SOCN ICE 47E
Contextual Info: LATTICE SEMICONDUCTOR M7E D 530^4^ Lattice DDDSG32 ILAT 4 G A L20XV10B T - 1/ 6 -1 9 - 0 7 High-Speed E’CMOS PLD Generic Array Logic FU N CTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 100 MHz