0D023 Search Results

74FCT533

Contextual Info: INTEGRAT E» DEVICE T7 4825771 dË J 4055771 0D02335 3 | ~ INTEGRATED DEVICE 97D 023 3 5 FAST CMOS OCTAL TRANSPARENT LATCH 3-STATE D ’T~‘f5-Ö7~Ö5 IDT54/74FCT533 IDT54/74FCT533A Integrated DeviceTechnology. Inc. FEATURES: DESCRIPTION: • ID T54/74FCT533 10.0ns m ax. clock to output;

Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 3 1 3 0 ~ T 'd ^ / 3 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA -CDISCRETE/OPTOJ 3T 0D02313 t |~ (Jnit i 600V 3A SM3J41 MAXIMUM RATINGS SY M B O L C H A R A C T E R IS T IC R ep etitiv e P e a k O ff- S ta te V oltage

380D25

Abstract: 120D10 120D25 120D3 120D45 240D10 240D25 240D3 240D45 380D45
Contextual Info: SSR FAMILY DATA BOOK T s he Opto 22 AC Power Series offers the industry the ultimate in solid state reliability. A 4000 volt photo isolation # CSA certified | Zero voltage turn-on A 200% load tested a t rated current at 0.5 power factor Built-In snubber |

Contextual Info: HIIICRTRLYST Umili S E M I C O N D U C T O R CAT64LC10/20/40 1K/2K/4K-Bit Serial E2PROM FEATURES • SPI Bus Compatible Commercial and Industrial Temperature Ranges ■ Low Power CMOS Technology Power-Up Inadvertant W rite Protection ■ 2.5V to 6.0V Operation

1I604

Contextual Info: r n r FU J I T S U LTD T\ • S3E » - 37 HT? 5 b 0 0 D S 3 7 S OTÓ « F C A J - ^ - 2 3 ' IX. M a rc h 1991 Edition 2.0 FUJITSU DATA SHEET MB82B79-17/-20 72K-BIT HIGH SPEED BI-CMOS SRAM 8192-WORD x 9-BIT BI-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79 is a 8,192 words by 9 bits static random access memory

486 motherboard schematic

Abstract: 486dx2 pinouts 486DX2 486dx schematic 4021-A TL05A Super386 t187 T106B J7 CHIPS TECHNOLOGIES
Contextual Info: CHIPS & TECHNOLOGIES INC SIE D • SO Töllb DDOSSba 4ÖT M C H P 9000-380 8 CHIPS CHIPS & TECHNOLOGIES INC S1E » ■ EQTflllb □□□PPbM 31S MCHP T -v 1 -1 7 -0 1 Copyright Notice Software Copyright 1992, Chips and Technologies, Inc. Manual Copyright © 1992, Chips and Technologies, Inc.

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

header 2X10 pin solder tail

Abstract: DS411 LR46923 230 98 Pm
Contextual Info: Unshrouded Headers 2.00 X 2.00 m m 0.079 x 0.079 in. Description Vertical Through-Mount Stacking Header DIM Y REF - DIM X - 2.00 m m (0.0 7 9 in.) 4_ I— $ $ m 2.0 0fl m mm (0.0 7 9 in.) 4.00 mm (0.1 5 7 in.) fj} 2.00 mm (0.0 7 9 in.) ^ T 0.180 mm in.)

kexz

Contextual Info: MOSEL-VITELIC b2E » MOSEL-VITELIC • b3533Tl GGGS33L. GES ■ M O V I V104J232, V104J236 512K X 32, 512K x 36 SIMM PRELIMINARY Features Description a 524,288 x 32 bit or 524,288 x 36 bit The V104J232 Memory Module is organized as 524,288 x 32 bits in a 72-lead single-in-line module.

Contextual Info: ‘H Y U N D A I HY534256A Series 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY534256 Series "HYUNDAI 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: Buffered inputs except RAS, Data

DA0996

Contextual Info: FEATURES & • D C -400 MHz ■ 2.2 dB Insertion Loss ■ 20 mV Transients ■ +21 dBm 0.1 dB Compression @ 1 MHz MODEL NO. DA0996 GaAs 6 Section Attenuator ■ 1 dB LSB, 63 dB Range 6 BIT ■ TTL Control ■ 24 Pin DIP IN /OUT G N D -« GND IN/OUT CO LO R B E AD

Contextual Info: * SYNERGY SEMICONDUCTOR SINGLE SUPPLY OCTAL PECL/TTL-to-TTL FEATURES PECL/TTL-to-TTL version of popular ECLinPS E111 Meets specifications required to drive highperformance x86 processors Guaranteed low skew specification Three-state enable Differential internal design

marking t54

Abstract: pvc 412 capacitors
Contextual Info: 4-oswf-o3 ALUMINUM ELECTROLYTIC CAPACITORS LQ mchicon S n a p -in T e rm in a l T y p e , S ta n d a rd Approved by Reliability Center for Electronic Component, Japan-Certitication No. RCJ-03-25C series RCJ Approved Anti-Solvent Feature Through 100V only

Contextual Info: I C R T R L Y S T ¡ S E M I C O N D U C T O R CAT24C44 256-Bit Serial Nonvolatile CMOS Static RAM FEATURES Single 5V Supply Commercial and Industrial Temperature Ranges Infinite E’PROM to RAM Recall JEDEC Standard Pinouts: -8-pin DIP -8-pin SOIC CMOS and TTL Compatible I/O

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

94Lc

Contextual Info: X IC O R E4E IN C J> ^=141743 0D 0S2T Û i P R E L IM IN A R Y IN F O R M A T IO N 4K Commercial Industrial 2 m X24LC04 X24LC04I r 512 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3V-6V Vcc Operation • Low Power CM O S — 2 mA Active Current Typical

CG8378

Abstract: utm2 burndy burndy connectors
Contextual Info: ZERO INSERTION FORCE EDGE CONNECTOR ON .156 The Burndy QIKLATCH fills an industry need for a zero insertion force P.C. board edge connector on .156 centers. QIKLATCH features a positive lock-to-board design and a simple manual release. In addition, QIKLATCH provides positive registra­

diodo 5AA

Abstract: PFBI PFB15AA80 H125 PFB15AA PFB15AA100 PFB15AA120 PFB15AA140 PFB15AA160 bidirectional thyristor module
Contextual Info: THYRISTOR M ODULE t h r e e P HASES A.C. C O N TR O L PFB15AA U L ;E 76102(M ) is a 6 chip Thyristor module which contains 3 indepen­ dent back-to-back SCR configurations. P F B 1 5A A • Easy construction by 3 phase back-to-back SCRs in one package. • High voltage 1600V

HY531000

Abstract: HY531000S HY531000J60 HY531000J
Contextual Info: •HYUNDAI H Y 5 3 1 S e r i e s 1 M x 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

CAT93C57

Contextual Info: IIIHCRTRLY5T • ■ III S E M I C O N D U C T O R CAT93C57 2K-Bit Serial E2PROM FEATURES ■ High Speed Operation: 1MHz Self-Timed Write Cycle with Auto-Clear ■ Low Power CMOS Technology Sequential Read Operation ■ W ide Operating Voltage Range Vcc = 4.5V to 5.5V

Contextual Info: b q 4 0 1 0 /b q 4 0 1 0 Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: M IC 2950/2951 MIC2950/2951 150mA Low-Dropout Voltage Regulator General Description The MIC2950 and MIC2951 are “bulletproof micropower voltage regulators with very low dropout voltage typically 40mV at light loads and 250mV at 100mA , and very low quiescent current. Like their predecessors, the LP2950 and