0D01 Search Results

Contextual Info: PERFORMANCE S E MI C O N D U C T O R 50E D I 70bEST7 0D01S7L S P33PCT373A/B OCTAL TRANSPARENT LATCHES WITH 3-STATE OUTPUTS ¿s— -;-FEATURES 3.3V ±0.2V Pow er Supply CMOS for Low Power Consumption Center Power and Ground Pins

LTC737

Contextual Info: { LITE-ON INC CHE TÏ SS3b3L,7 0D013bö b m LTC-7ÔC s ER m m m mV.-jcM~ m ••' - ••-•^ • ~•- im - ' ^-m /-•-~ C sm mì 0.7" FOUR DIGÏT LED CLOCK FREQUENCY DISPLAYS :; : < T - £ U - 3 3> FEATURES • 0.7 INCH 17.78mm HEIGHT CHARACTER RED

Contextual Info: LOGIC DEVICES INC 2kE D • SSbSTQS 0D01É11 T ■ _ _ T - Ÿ S - 0 7 LMU08/LMU8U 8 x 8-bit Parallel Multiplier FEATURES Q 35 ns Worst-Case Multiply Time Q Low Power CMOS Technology □ LMU08 Replaces TRW MPY008H

BM45-12

Abstract: ACRIAN T808 LBAA BM45-12-2 Scans-00115720
Contextual Info: 0182998 A C R I AN INCT? D lT | 0 1 0 2 ^ 0 0D013D7 fl W ~07 D AN BM45"12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The BM45-12 is specifically designed to meet rugged VHF land mobile radio requirements. Internal matching simplifies circuit design

Tektronix schematic

Abstract: schottky transistor spice tektronix custom
Contextual Info: TEKTRONIX INC/ INTEGRATE» EIE D a m iS M G 0D011E t> CIRCUITS OPERATION v V :£>“ • SPECIFICATIONS '^1 BIPOLAR PRODUCTS AND FOUNDRY S E R V I C E S ^ S ^ ^ v ^ V - ORDERING INFORMATIONj TEK INTEGRATED QUICKCHIP 2K FAMILY OF INTEGRATED CIRCUIT ARRAYS WITH SCHOTTKY

CC702

Abstract: FT1000A FT1000BV FT1500DV TA20 T9G0 TO200AC package
Contextual Info: POUEREX INC Tl D e | 7 5 1 ^ 5 1 0D017ÛS □ Phase Control Thyristors SCRs lT(AV) 7c =65° C 50% Duty Cycle, Half Sine (Amps) * x () I tsm (Amps x 103) 50 Hz 60 Hz Pt Idrm/I rrm for @ Rated Fusing Vdrm/Vrrm @ 8.3 ms Vdrm/Vrrm and Tj<mbx) / A 2se c \ Range

C3303

Abstract: ua 471 R-280-A R-280-B R-281-A R260
Contextual Info: 4DE D FASCO INKS/ S E N I S Y S 34^736 0D01234 4 mSENI i n r iV .'i:» ;! • T '4 \ - R-280/281 Series Reflective Optical Switches 0.4 55 C11.56] 0.445 C11.30J 0.145 C3.683 . 0.135 C3.43 DIMENSIONS ARE! IN INCHES M IL L IM E T E R S ] 0,255 C6.473 0.245 £6.223

860W

Abstract: CLI840W CLI850W CLI860W CLI870W
Contextual Info: ‘ E D «a 34cJci73a 0D01103 Q iSENI T '^ 1 '7 3 FASCO INDS/ SENISYS CLI840W CLI850W CLI860W CLI870W -330 %!/ Optical Switches nHJ-. C GENERAL DESCRIPTION — This optical switch series “7 r couples a gallium arsenide infrared em itting diode and a _

Contextual Info: I- 2 COLLMER SEIUCONÏUCTOR INC S K 1 5 1 2 4flE D • 52307=12 0D01fl22 C1S2 Scope This specifies Fuji power MOSFET 2 S K 1 5 1 2 2. Outline I Construction I! ) Application HI) Outview N-channel enhanceaent mode power MOSFET for switching

et1275

Abstract: M101 2SC3551 equivalent
Contextual Info: B IP O LA R T R A N S IS T O R S R atings and Specifications COLLMER Q3 SEMICONDUCTOR INC M6E D • 22307^2 0D01b03 13 1 « C O L Buffer drive tra n sisto rs • B e st su ite d fo r d riv in g t r a n sis to r m o d u le s. • A ll t e r m in a ls are in su la te d fro m m o u n t in g plate.

5082-2794

Contextual Info: • 4M475S4 0D01b3b . H E WL E TT - P A C K A R D / WHn% HEWLETT ^3^ BH PA rmnutr L1r CMPNTS l ML'nM PA C K A R D b it. Schottky Barrier Diodes for Stripline, Microstrip Mixers and Detectors 5082-2200/01/02/03 5082-2207/08/09/10 5082-2765/66 5082-2774/75

powerex T9G

Abstract: marking C451 to200ac thyristor 14B21
Contextual Info: POUEREX INC Tl D e | 7 5 1 ^ 5 1 0D017ÛS □ Phase Control Thyristors SCRs lT(AV) 7c =65° C 50% Duty Cycle, Half Sine (Amps) * x () Itsm (Am ps x 103) 50 Hz 60 Hz Pt Idrm/Irrm for @ Rated Fusing Vdrm/Vrrm @ 8.3 ms Vdrm/Vrrm and Tj < mbx) / A 2sec\ Range

Schottky diode Die

Contextual Info: OPTEK TECHNOLOGY INC MAE D • L,7TflSflO 0D013TS SL1 ■ OTK \L?t1 u r i t K Product Bulletin OSC0054 March 1990 -p Q \- Schottky Diode Die OSCOQ54 - QSC0210 Series Features • Rugged guard ring construction for stress protection • 175°C operating junction temperature capability

455f

Abstract: CS454F02 CS454F05 CS454S02 CS454S05 CS455S08 CS455S10 CS455S12 CS455S15 CS455U15
Contextual Info: COLLMER SEMICONDUCTOR INC SSE D 52387=32 0D0134M b • T^ä-öS" CS454 - CS455 Series High Voltage, High Current Rectifiers Features: Ratings to 15 Kilovolts Glass Passivated Controlled Avalanche Junctions High Surge Capability Designed for High Temperature Operation

DB05

Contextual Info: D 1/ TRIANGLE 3SE D • 50415Ü2 0D01170 □ ■ O I T DROP-IN BROADBAND STRIPUNE ATTENUATORS DC-18 GHz S E R IE S PSAM 1 Watt T - 0 ~ 1 - 15 GENERAL INFORMATION: The KDI/Triangle PSAM Series attenuators contain a laser trimmed distrib­ uted element within a glass/metal sealed, leaded package. Optimum per­

c 50275

Contextual Info: niTSU ni ELECTRIC CO L TD 4 ñE D B¡ b2SD575 0D01S71 30? 1 PIEC4 MITSUMI % \ MONOLITHIC IC 2.1V Stabilized Power Supply Monolithic IC LVC526-2 L V C 5 2 6 "t, < 6>^, T y p . 0. I V ¿ L fc 2 .1 V S 'h A t t J L V C 526 as the stabilixed power supply w ith the minimum inputoutput voltage difference set at T y p . 0. I V . w hich compares

R210A

Abstract: r-210-b R-210-A 5V1D Senisys
Contextual Info: 3^738 4QE D 0D01224 1 O S E N I 3 tiHBQiai R-210 Series Reflective Optical Switches — FASCO INDS/ SENISYS 0.705 «7.911 0.6 9 5 C17£53 0.4B9 112.421 0.479 C12.17] | 0.381 C9.68] 0.371 £9.42] DIMENSIONS ARE IN INCHES M IL L IM E T E R S ! f— 0.200 15.083

eakt

Contextual Info: ADVANCED POlilER TECHNOLOGY L3E J> 05S7TDT A 0D011b4 ObT H A V P d v a n c e d P ow er T e c h n o lo g y K 2 0 —! APT2X30D60J APT2X30D50J APT2X30D40J Ai O —! 600V 30A 500V 30A 400V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES

Contextual Info: Frequency Mixers M o d e l s t ? 4 ° 9 1 , m o s t W id e ly u s e d t> m a o b f lf l ii 0D01B13 s t a « s e e SAM-2 TFM-2 SYM-2 ZEM-2B TFM-2P* ZFM-2 LE V E L 7 +7dBm LO, up to +1dBm RF SCIENTIFIC/ n rllT T , TSM_2 MINI-CIRCUITS ZLW_2 J ^ | typical computer-automated

Contextual Info: | SANKEN ELECTRIC CO LTD 55E » • TTTDTMl 0D01G24 07H « S A K Ü Silicon N P N Triple Diffused Planar 2SD2082 ☆D a rlin g to n ■¿¡•Complement to type 2SB1382 A pplication Example: Driver for Solenoid, Relay and M otor, and General Purpose • Outline Drawing 5 . .FM100

westinghouse DIODES

Abstract: CXC805 SW12CXC805 Westinghouse diode 2950A westinghousE SW12CXC805
Contextual Info: ^ 9709955 D E ^ I^ O ^ S SEMICONDUCTORS 0D014flS 34C 01485 0 "T V O / Technical Publication WESTCODE SEMICONDUCTORS DC805 Issue 1 February 1981 Ceramic Capsule Silicon Diodes Type CXC805 1625 amperes average: up to 2200 volts V r r m RATINGS Maximum values at 175°C, Tj, unless stated otherwise

H2745-7

Abstract: H2745-9
Contextual Info: m C R O S E M I CORP/ MICRO ShE D • bllS'ïD? 0D01475 T17 ■ M 2L MICPQ QUALITY / t - o v o ì SEMICONDUCTOR INC High Voltage Rectifiers For Medium Frequency X-Ray Apparatus Medium Recovery Speed Platinum Doped Epoxy Encapsulated Avalanche Quality LTR.

DO-205

Abstract: DSA1110-16 DS 0,5 800 DSAI110-12F DSAI80-12F DSA110-16F 80-12F DSA1110-14 110-14F 110-08F
Contextual Info: MbûbHZb 0D013b3 «IXV Rectifier Diodes = 160 A, Standard Diodes DS. , Avalanche Diodes (DSA.) ’ FAV Type kW DSA 110-18 F * • DSA 80-18 F D S A 1 10-16 F • DS 110-16 F • DSA 80-16 F • DS 80-16 F • DSA 110-14 F • DS 110-14 F • DSA 80-14 F

Contextual Info: niCROSEMI CORP/ niCRO 5bE I • bll51Q7 0D01313 TS1 ■ MOL • r _ c 3 3 > - v 'S > MICRO QUALITY / 3 Amp Schottky Rectifiers SEMICONDUCTOR, INC 1N5820,1N5821,1N5822 20 Volt, 30 Volt and 40 Volt V RRM Very Fast Switching Speed Minimum Sized, Low Cost Epoxy Encapsulation