0GQ07 Search Results

T588

Abstract: T588N ts88n k 036
Contextual Info: EUPEC T 588 N SEE D Typenreihe/iype range T 588 N Elektrische Eigenschaften Electrical properties 400 34032^7 0GQ07A3 <170 » U P E C 600 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchiaBstrom Dauergrenzstrom repetitive peak forward off-state

Contextual Info: EUPEC T 588 N SEE D 34032^7 0GQ07A3 <170 » U P E C Typ enreihe/iype range T 588 N Elektrische Eigenschaften Electrical properties Vdrm. Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages

x4060

Abstract: 1N5615 1N5617 1N5619 1N5621 1N5623 Fast Silicon Rectifiers
Contextual Info: 15E 0 I R S M ELECTRO N /SEN SItR O N 7S03ti50 0GQ07Ö0 fi I *SENS/TRON SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 FAX 516 242 9798 JAN JANTX JANTXV TECHNICAL SPECIFICATIONS HIGH CURRENT A XIA L LEAD

Contextual Info: * 8-BIT SCANNABLE REGISTER SYNERGY SY10E241 SY100E241 SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ 1000ps max. CLK to output SHIFT overrides HOLD/LOAD control Asynchronous Master Reset Pin-compatible with E141 ESD protection of 2000V Fully compatible with Industry standard 10KH,

Contextual Info: lit t le MX23C41GO 4M-BITI51 2K x 8 /2 5 B K x IB ] CMOS MASK ROM FEATURES • Switchable configuration - 512K x 8 byte mode - 256K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns • Totally static operation • • •

Contextual Info: bTTflSflO 0000752 7 • 27E D OPTEK TECHNOL OGY INC Product Bulletin OPL560 July 1989 Replaces August 1988 -qi-fco, 0 .Q P T E K Photologic Sensors Types QPL560, OPL561, OPL562, OPL563 Series Features • • • • • Four output options High noise immunity

Contextual Info: GT-64011 PCI System Controller for R4640 Processors Preliminary Revision 1.2 7/2/97 Please contact Galileo Technology for possible updates before finalizing a design. FEATURES Integrated PCI system controller for high-performance embedded applications Supports all embedded 32-bit IDT MIPs bus compati­

T-DQ12

Abstract: OQ10
Contextual Info: E L E C T R O N I C D E S I G N S INC 3QE D • 3230114 0000723 7 ■ ^ED I EDI8M16256C Eftcfronta Ottici« Inc* High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module The EDI8M 16256C is a4096K-bit high speed C M O S Static R A M Module consisting of sixteen 16 256Kx1

Contextual Info: MICRO ELECTRONICS CORP 11E D bCH17 Ôa QQQQ7b ô T M L1121L INFRARED LIGHT EMISSION DEVICE • GaAlAs Si This is the new type of high power and high speed infrared light emission device Dimension: mm • This device maintains nondirectional characteristic

7R50

Abstract: ML302
Contextual Info: MIC RO E L E C T R O N I C S CORP 11E » b {m ?a a üOGQ7t>b s ML302 PIN PHOTODIODE OUTLINE Unit : mm ML302 is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It features high sensitivity and small junction capacitance make it possible to operate

varistor 594 ph

Abstract: z151 marking 130 D669 z301 800 Z151-160 RA280
Contextual Info: D 6 s 6 e M a x i Part Number Actual Part Marking r i R a t i n g s Continuous Rated Voltage AC RMS DC Volts Volts e Electrical Rated Single Pulse Transipnt Energy Peak 10/1 OOOps 8/20ps Joules Amps Varistor Voltage @1 mA DC Min Max Volts Volts s Characteristics