BCH17 Search Results

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

Contextual Info: MICRO ELECTRONICS CORP 11E D bCH17 Ôa QQQQ7b ô T M L1121L INFRARED LIGHT EMISSION DEVICE • GaAlAs Si This is the new type of high power and high speed infrared light emission device Dimension: mm • This device maintains nondirectional characteristic

Contextual Info: MICRO ELECT RO NICS LT» 31E D Q btm 7öa QQDDÖMT =1 E 3 Í1EHK Infrared Emitting D iodes 'T - 'U - U T - 'H nm p o TYP (mW) 'f Im A) V vf MAX (V) M I3 1 T M I3 1 T A 940 880 0.5 2.8 20 20 M I3 2 T M I3 2 T A 940 880 0.5 2.8 M I5 1 T M I5 1 T A 940 880

operational amplifier

Abstract: amplifer NJM3414 high gain jfet amplifier power operational amplifier NJM3900 single supply operational amplifer NJM4556 NJM3416 NJM2041
Contextual Info: INTEGRATED CIRCUITS OPERATIONAL AMPLIFIERS MAX. OTTOT S P E C . < $25'C TYP lil!ïï§j§|§li S tB W TYPE i ü NJMOP-07 111 NJM318 NJM741 ¡11 NJM2107F 111 NJM4250 NJM5534 NJM022 NJM022B NJM062 NJM072B NJM082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

SB51C

Contextual Info: MICRO ELECTRONICS L T D 31 E » o bcmpaa ooonaM? s q m e h k Ultra Bright LED T - 4 1 - Z I ~ r- H 1 -^ -3 TYPE SO U R C E Xp 'v NO. C O LO U R nm MIN (mcd) 'f (mA) Vf M AX (V) 'f (mA) L E N S C H A R A C T E R IS T IC S PACKAG E C A SE NO. M SB24TA G aAIAs red