0G037 Search Results

Contextual Info: ALLEGRO MICROSYSTEMS INC =13 D • 0S0433Ö 0G037M7 □ ■ A L GR T-91-01 PROCESS YFA Process YFA NPN Power Darlington Transistor Process YFA is a double-diffused epitaxial planar N P N silicon Darlington pair. It is designed for use in high-gain, high-power amplifiers. Its complement is

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.

2N4235

Contextual Info: SOLITRON EVICES INC 0Olitran 4flE ]> • Ô3bûb02 0G037b4 2fl7 M S O D -2 I Devices, Inc. NO.: S P E C I F I C A T I O N S 2N4235 TYPE- PNP silicon power ’ TRANSISTOR C A SE: TO-5 MAXIMUM RATINGS Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (V CE0)

sk150da

Abstract: SK150D
Contextual Info: Öl3bt.71 0G0374fl 1Gb S1E » SEMIKRON SEMIKRON INC Maximum Ratings Conditions VcEVsus VcEV VcBO Vebo lc lc > CM I II If = II O o Ie = 0 D. C. tp = 1 ms -lc Ib Ptot Tvj Tease = 25 °C Tstg Visol Values Units 1000 V 1000 1000 7 150 300 150 8 1000 - 4 0 . . . + 150

0520K

Abstract: ecg1027 3243J G1027
Contextual Info: P H IL IP S E C G INC 17E tjk53c]2fl 0G037Ö2 E C G 1027 AUDIO POWER AMPLIFIER MODULE semiconductors FO R 13 W ATTS TYP. A F POWER A M PLIFIER 1 POW ER SUPPLY EQUIVALENT C IR C U IT ► 7 ,2 * 3.24 . 3j j O i 1 *4 0.S 3.0 *I H f.2 0 vii. ,_j dim ensions

NJM2068

Abstract: NJM206BM NJM2068 equivalent f 4558 RS 4558 NJM2068V 4558 NJM2068D power amp 4558 NJM2068L
Contextual Info: LOW -HOISE DUAL OPERATIONAL AMPLIFIER NJM2068 T he NJM2068 is a high perform ance, Low noise dual operational am plifier. This am plifier features popular pin-out, superior noise perform ance, and superior total harm onic distortion. This amplifier also features guaranteed noise perfor­

NJN2114D

Abstract: NJM2114 NJM2114M NJM2114D NJM5532 RLS600
Contextual Info: HIGH PERFORMANCE LOW-NOISE DUAL OPERATIONAL AMPLIFIER NJM2114 N JM 2 1 1 4 is a h ig h p e rfo rm a n c e d u a l lo w n o is e o p e r a tio n a l a m p lifie r w h ic h c o u ld b e re p la c e d in a p p lic a tio n w ith N JM 5 5 3 2 . C o m p a rin g to N JM 5 5 3 2 , it h a s s u p e r io r s p e c ific a tio n s o n S le w R a te . B a n d w id th a n d O ffset V o lta g e .

Contextual Info: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

80c51/31 MHS

Contextual Info: October 1992 IlM l 80C31/80C51 DATASHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31/80C51-L : 0 TO 6 MHz WITH 2.7 V < Vcc < 6 V 80C51F : 80C51 WITH PROTECTED ROM 80C31/80C51:0 TO 12 MHz 80C31/80C51-1: 0 T 0 16 MHz 80C31-S/80C51-S : 0 TO 20 MHz FEATURES •

957a

Abstract: 75T957A-1P Teltone M-957 75T957-IP qau3
Contextual Info: IIE SILICON SYSTEMS INC Mmsuskms 0 2 5 3 ^ 5 Qaü37?Q 1 • D SSI 75T957/957A DTMF Receiver with Diai Tone Reject Filtér — T -7 S -T 7 -0 7 May, 1989 FEATURES DESCRIPTION The SSI 75T957/957A combines swltched-capacitor and digital frequency measuring techniques to decode

ERA15-06

Abstract: ERB12-02 ERA15-04 ERC04-10 ERA15-08 ERA15-10 ERA17-02 ERA17-04 ERB12-01 ERB12-04
Contextual Info: General Purpose Diodes Ratings and characteristics Type M a x im u m ra tin g V rrm V r D C V o lts V o lts ERA15-01 ER A 1 5-02 100 80 200 160 ER A 15-04 400 320 ER A 15-06 ERA15-08 ERA15-10 600 480 800 640 1000 800 ERA17-02 ERA17-04 200 160 400 320 lo

lX5285

Abstract: scsi2 scsi3
Contextual Info: U N Doc #; 5285 JSVi>f . . j olì»'. • > K ' 3 ’‘ & W S S i I >.s A " 800mA M I C R O E L E C T R O N I C S Ti-ie I n f i n 1i t e P o w e r o f I n n o v a t i o n P *n L o w D r o p o u t S o u rce A n d S in k D r e l i m i n a r y KEY DESC R IPTIO N

FCC64

Contextual Info: PHILIPS E C G INC 17É D • bfcjS3T2fl D0D377D 4 T - 74-05-01 E C G 1024 AUDIO POWER AMPLIFIER MODULE semiconductors F O R 8 W A T T S T Y P . A F P O W E R A M P L IF IE R 1 P O W E R SU P P L Y *-!* . ,2-sa i *4 W 4 ► IL o . J u ►•*■<> dimensions in mm

Contextual Info: & C I A T O - " S b S IS b l 0DD37S1 ADS-946 2 Tb • 14-Bit, 8MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • • • • • • • • • • 14-bit resolution 8MHz guaranteed sampling rate No missing codes over full military temperature range

DD660

Contextual Info: M OSEL VITEU C PRELIMINARY V1816J32 1M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V1816J32 memory module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line module. The 2M x 32 memory module uses 4 Mosel-Vitelic 1M x 16 DRAMs. The x32 modules

Contextual Info: QUAD OPERATIONAL AMPLIFIER NJM2060 T he NJM2060 integrated circuit is a high-gain, w ide-bandw idth, quad operational am plifier capable of driving 20V peakto-peak into 400fi loads. T he NJM2060 com bines many of the features of the NJM2058 as well as providing the capability

Contextual Info: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

IN5908

Abstract: 1N590A
Contextual Info: 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • 5.0 VOLTS REVERSE STANO-OFF VOLTAGE • DESIGNED FOR T 2L LOGIC PROTECTION • 1500 WATTS PEAK PULSE POWER DISSIPATION The 1N5907 TAZ, packaged in a hermetically sealed glass-to-metal pack­ age, is available in JAN, JANTX and JANTXV qualified to MIL-STD19500/500. The 1N5907 and 1N5908 protect TTL, ECL, DTL, MOS and MSI

AAY42

Abstract: germanium diode
Contextual Info: B K C IN T E R N A T IO N A L D3E D I 117^03 □□0G037 ~T fl ^ 3 Type No. AAY42 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKCInternational Electronicslnc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377

Contextual Info: POWER 9100 GRAPHICS CONTROLLER August 22, 1994 Chapter 1. Technical Overview Single-Chip 2-D Graphics Accelerator Powerful Graphics Features O Ultra-high-speed local-bus display controller uses w orkstation display technology to give m aximum acceleration w ith graphical user interfaces such as

80c31n

Abstract: IS80C51 i80c51 80c31 mhs 80c51/31 MHS
Contextual Info: P R E V IE W M l DATA SHEET_ _8 0 C 3 1 U / 8 0 C 5 1 u HIGH SPEED 0 to 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31|i : ROMLESS VERSION OF THE 80051^1 80C31 ji/80C51 n-S : 0 TO 20 MHz 80C31 |i-S/80C51 (i-25 : OTO 25 MHz 80031p/80C51|i-30 :0 TO 30 MHz

Contextual Info: VITESSE VS8061/8062 Data Sheet 2.5 Gbits/sec 16-Bit Multiplexer/ Demultiplexer Chipset Features • Serial Data Rate up to 2.5 Gb/s • 16-bit Wide ECL 100K Compatible Parallel Data Interface • Differential High Speed Data Outputs • Differential or Single-ended High Speed Data

ML4041CQ

Contextual Info: Micro Linear ML4041, ML4042 Read Data Processor GENERAL DESCRIPTION FEATURES The ML4041, ML4042 is a monolithic bipolar integrated circuit used in disk drive systems to detect amplitude peaks generated by the recording heads during a Read operation. Connected to the read/write amplifier

Contextual Info: L I N Doc #: 7705 5 V S upply V oltage S uper viso r with R eference T h e I n f i n i t e P o w e r o f I n n o v a t i o n P r e l i m i n a r y DESCRIPTION T h e LX7705 series o f voltage supervisory circuits are greatly im proved m onolithic integrated circuits for m icroprocessor and