09MAY02 Search Results
09MAY02 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
transistors VISHAY
Abstract: BC807 BC808 BC817 BC817-16 BC818 BC818-16
|
Original |
BC817, BC818 O-236AB OT-23) BC818-16 BC817-16 OT-23 09-May-02 transistors VISHAY BC807 BC808 BC817 BC817-16 BC818 BC818-16 | |
pin configuration NPN transistor BC558
Abstract: pin configuration pnp transistor BC558 pin configuration npn transistor BC557 pin configuration NPN transistor BC548 pin configuration pnp transistor BC557 BC558 pin BC558 transistor BC558 BC558 Datasheet BC557
|
Original |
BC556 BC558 O-226AA BC557 BC558 BC546. BC548 09-May-02 pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 pin configuration npn transistor BC557 pin configuration NPN transistor BC548 pin configuration pnp transistor BC557 BC558 pin transistor BC558 BC558 Datasheet | |
BCW66G
Abstract: BCW68G vishay TRANSISTOR Sot-23 MARKING CODE
|
Original |
BCW66G O-236AB OT-23) OT-23 E8/10K 30K/box 18-Jul-08 BCW66G BCW68G vishay TRANSISTOR Sot-23 MARKING CODE | |
Si8900EDBContextual Info: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B |
Original |
275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-02077--Rev. 13-May-02 93-5224-x Si8900EDB | |
BCW68G
Abstract: transistor dg sot-23 marking code DG 20MHZ BCW66G
|
Original |
BCW68G O-236AB OT-23) 100mA 500mA 20MHZ 09-May-02 BCW68G transistor dg sot-23 marking code DG 20MHZ BCW66G | |
Contextual Info: GS8050xU Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors NPN TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • NPN Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output |
Original |
GS8050xU O-226AA GS8550xU 08-Apr-05 | |
BCW60 series
Abstract: BCW60C BCW60D BCW60 BCW60A BCW60B BCW61
|
Original |
BCW60 O-236AB OT-23) OT-23 BCW60A BCW60B BCW60C BCW60D 09-May-02 BCW60 series BCW60C BCW60D BCW60A BCW60B BCW61 | |
BC846
Abstract: BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859
|
Original |
BC846 BC849 O-236AB OT-23) OT-23 E8/10K 30K/box BC846A BC847A BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859 | |
BCW61 series
Abstract: Transistors bd 133 BCW60 BCW60A BCW60B BCW60C BCW61 BCW61A BCW61B BCW61C
|
Original |
BCW61 O-236AB OT-23) 200Hz BCW60A BCW60B BCW60C BCW60D 09-May-02 BCW61 series Transistors bd 133 BCW60 BCW60A BCW60B BCW60C BCW61A BCW61B BCW61C | |
vishay TRANSISTOR Sot-23 MARKING CODEContextual Info: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125) |
Original |
BCW66G O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 08-Apr-05 vishay TRANSISTOR Sot-23 MARKING CODE | |
BCX70H
Abstract: vishay TRANSISTOR Sot-23 MARKING CODE BCX70 BCX70G BCX70J BCX70K BCX71
|
Original |
BCX70 O-236AB OT-23) OT-23 BCX70G BCX70H BCX70J BCX70K BCX70H vishay TRANSISTOR Sot-23 MARKING CODE BCX70G BCX70J BCX70K BCX71 | |
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. ^ COPYRIGHT B 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. PP MDB PLUG (PI) 1 10 PLUG P WHT/BLU BLU WIRING DIAGRAM A AMP 1471-9 REV 31MAR2000 >2 LOC REVISIONS DIST EH 00 p LTR DESCRIPTION |
OCR Scan |
31MAR2000 09MAY02 15DCT03 07DCT08 E-08-024786 14DEC95 | |
Contextual Info: Application Note Vishay Semiconductors formerly General Semiconductor TVS Placement The Critical Path to the Leading Edge By Jon Schleisner Senior Applications Engineer Reverse avalanche transient suppressors have excellent turn-on characteristics. Typically these devices turn on in |
Original |
64KV/ms 30KA/ms. 09-May-02 | |
Contextual Info: 4 THIS DRAWING IS U N P U B L IS H E D . COPYRIGHT RE LEAS E D BY TYCO ELECTRONICS 2 3 CORPORATION. FOR ALL 1 P U B LIC ATIO N RIGHTS DIST LOC RESERVED . EH R E V IS IO N ' 00 D E S C R IP T IO N LT R REL PER ECN 0 B 1 0 - 0 2 6 7 - 9 9 08SEP99 APVD LDS BA |
OCR Scan |
31MAR2000 0-0079-02-lh\ 0B10-0267-99 0B10-Ã REV/EC-0B10-0079-03 08SEP99 16MAY00 09MAY02 | |
|
|||
bruce
Abstract: tvss
|
Original |
5KE15) 09-May-02 bruce tvss | |
General Semiconductor
Abstract: transistor base collector configuration BC807 BC807-16 BC808 BC808-16 BC817 BC818 transistors VISHAY
|
Original |
BC807, BC808 O-236AB OT-23) OT-23 BC807-16 BC808-16 09-May-02 General Semiconductor transistor base collector configuration BC807 BC807-16 BC808 BC808-16 BC817 BC818 transistors VISHAY | |
Contextual Info: GS8050xU Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors NPN TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • NPN Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output |
Original |
GS8050xU O-226AA GS8550xU 800mA, 09-May-02 | |
71001
Abstract: SUD50N0309P SUD50N03-09P SPICE Device Model SUD50N03-09P
|
Original |
SUD50N03-09P 0-to-10V 09-May-02 71001 SUD50N0309P SUD50N03-09P SPICE Device Model SUD50N03-09P | |
Contextual Info: GS8050xU Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors NPN TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • NPN Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output |
Original |
GS8050xU O-226AA GS8550xU 18-Jul-08 | |
vishay TRANSISTOR Sot-23 MARKING CODE
Abstract: "MARKING CODE DG" marking DG sot-23 NPN transistor 20MHZ BCW66G BCW68G
|
Original |
BCW68G O-236AB OT-23) 18-Jul-08 vishay TRANSISTOR Sot-23 MARKING CODE "MARKING CODE DG" marking DG sot-23 NPN transistor 20MHZ BCW66G BCW68G | |
Si4420DYContextual Info: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si4420DY 18-Jul-08 | |
tvs diode 5000W
Abstract: tvs diode stacking tvs-diode 5KE200 tvs diodes tvs 5000w
|
Original |
09-May-02 tvs diode 5000W tvs diode stacking tvs-diode 5KE200 tvs diodes tvs 5000w | |
pin configuration NPN transistor BC558
Abstract: pin configuration pnp transistor BC558 BC558 SOT-23 transistor BC558 BC558 BC846 BC849 BC856 BC856A BC857
|
Original |
BC856 BC859 O-236AB OT-23) OT-23 E8/10K 30K/box BC856A BC858A pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 BC558 SOT-23 transistor BC558 BC558 BC846 BC849 BC856A BC857 | |
BCW71
Abstract: marking code k1 BCW72 PNP Epitaxial Silicon Transistor sot-23 BCW69 BCW70
|
Original |
BCW71 BCW72 O-236AB OT-23) OT-23 BCW71 09-May-02 marking code k1 BCW72 PNP Epitaxial Silicon Transistor sot-23 BCW69 BCW70 |