09AUG10 Search Results

JASO

Abstract: ISO-7637-2 pulse 5 ISO7637-2 7637-2 protection circuit SM5A24A 7637-2 load dump test 7637-2 converter TVS vishay ISO-7637-2
Contextual Info: VISHAY GENERAL SEMICONDUCTOR Transient Voltage Suppressors Application Note Transient Voltage Suppressors TVS for Automotive Electronic Protection By Soo Man (Sweetman) Kim, Senior Application Manager 8 s 8 μs/20 μs IPPM 100 % A major challenge in automotive design is protecting

SI7997Dp

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

BY228

Contextual Info: BY228 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

BY228-13

Abstract: BY228-15 BY228
Contextual Info: BY228-13 , BY228-15 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: SPICE Device Model SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SQM18N33-160H Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 330 RDS(on) () at VGS = 10 V 0.160 ID (A) • TrenchFET Power MOSFET 31 Configuration

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 890 MHz 4.5 VDC Lower Frequency: Upper Frequency: 960 Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC +2.0 +4.0 dBm Output Power: Supply Current: MHz 27 nd mA Harmonic Suppression 2 Harmonic :

Contextual Info: SQM18N33-160H Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 330 RDS(on) () at VGS = 10 V 0.160 ID (A) • TrenchFET Power MOSFET 31 Configuration

Contextual Info: SQM18N33-160H Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 330 RDS(on) () at VGS = 10 V 0.160 ID (A) • TrenchFET Power MOSFET 31 Configuration

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FOR BY TYCO E L E C T R O N IC S REVISIONS P U B L IC A T I O N ALL C O P Y R IG H T 2 R IG H T S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N PHYSICAL PROPERTIES: HOUSING MATERIAL: PBT FLAMMABILITY: U L 9 4 V - 0

IEC 60068-1 low pressure

Abstract: SnPb40 VR68
Contextual Info: VR68 Vishay BCcomponents High Ohmic/High Voltage Metal Glaze Leaded Resistors FEATURES • Rmax. = 68 MΩ; Umax. = 10 000 VDC • These resistors meet the safety requirements of: UL1676 510 kΩ to 11 MΩ ; File No: E171160 IEC 60065, clause 14.1.a) DIN EN 60065, clause 14.1.a)

Contextual Info: BY228-13 , BY228-15 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

IEC 60068-1 "high temperature" resistor

Contextual Info: VR68 Vishay BCcomponents High Ohmic/High Voltage Metal Glaze Leaded Resistors FEATURES • Rmax. = 68 MΩ; Umax. = 10 000 VDC • These resistors meet the safety requirements of: UL1676 510 kΩ to 11 MΩ ; File No: E171160 IEC 60065, clause 14.1.a) DIN EN 60065, clause 14.1.a)

Contextual Info: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

SiHS20N50C

Contextual Info: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested

Contextual Info: BY228 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: BY448 , BY458 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: BYX82, BYX83, BYX84, BYX85, BYX86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in

BY448

Abstract: BY458
Contextual Info: BY448 , BY458 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21