0908SQ Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

Contextual Info: Document 617 -1 Square Air Core Inductors • Excellent Q factors – up to 130 • Current handling as high as 4.4 Amps! • 20 inductance values from 5.5 to 27 nH • Flat top and bottom for reliable pick and place and mechanical stability • All values available in 2% tolerance

INDUCTANCE

Abstract: coilcraft xal
Contextual Info: Document 125-1 -LfIt.NcoEm N O R E ORD er.coilcra Designer’s Kits rd http://o To help simplify your prototyping, we offer low-cost Designer’s Kits for many of our products. Each contains an assortment of in-stock values along with detailed product specifications. We even

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

c4242

Abstract: 0806SQ-5N5 C424 362 C4242 Designer Kit C424-2 2c4242
Contextual Info: Document 617 -1 Square Air Core Inductors • • • • Excellent Q factors – up to 130 Current handling as high as 4.4 Amps! 20 inductance values from 5.5 to 27 nH All values available in 2% tolerance Designer’s Kit C424 contains 10 each of all 5% values;

AN 5218

Abstract: lumped 0807SQ-22N
Contextual Info: Document 680-1 Transmission Line Model These transmission line models accurately simulate the frequency-dependent behavior of Coilcraft surface mount “Spring” air core inductors within the frequency limits shown in the accompanying table for each individual

152-B1

Contextual Info: Document 617 -1 Square Air Core Inductors • • • • Excellent Q factors – up to 130 Current handling as high as 4.4 Amps! 20 inductance values from 5.5 to 27 nH Flat top and bottom for reliable pick and place and mechanical stability • All values available in 2% tolerance

Contextual Info: Document 617 -1 Square Air Core Inductors • • • • Excellent Q factors – up to 130 Current handling as high as 4.4 Amps! 15 inductance values from 6.0 to 27 nH All values available in 2% tolerance Designer’s Kit C424 contains 10 each of all 5% values;

AFT09MS031NR1

Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from

LT6110

Abstract: LTM4600
Contextual Info: LT6110 Cable/Wire Drop Compensator Features Description n n n The LT 6110 is a precision high side current sense with a current mode output, designed for controlling the output voltage of an adjustable power supply or voltage regulator. This can be used to compensate for drops in voltage at

Contextual Info: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package

atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

A5M06

Abstract: Transistor Z17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

C4242

Abstract: Designer Kit C424-2 0908SQ-27NGLC
Contextual Info: Document 617 -1 Square Air Core Inductors • • • • Excellent Q factors – up to 130 Current handling as high as 4.4 Amps! 15 inductance values from 6.0 to 27 nH All values available in 2% tolerance Designer’s Kit C424 contains 10 each of all 5% values;

ATC600F470BT250XT

Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

planar transformer theory

Abstract: 0805CS-060XMBC 0402CS-10NXJBX do33116p C337 w 79 a4490 0805CS-220XJBC DO3316C-334 MAX2620 SC4501
Contextual Info: 07/2009 COILCRAFT MAGNETICS FOR IC REFERENCE DESIGNS – 2009 COILCRAFT MAGNETICS FOR AVNET MEMEC SUPPLIER REFERENCE DESIGNS Avnet Memec is proud to be a distributor for Coilcraft as well as several leading semiconductor firms, many of whom require high performance inductors and

Z6 3pin

Abstract: J262 AFT09MS007NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

c4242

Abstract: c3192 xpl4020 C324B C379 transistor c331 C324B-2 C424 c427 diode transistor c380
Contextual Info: Document 125-1 E -LItN N O R c E . f ORD der.coilcra om Designer’s Kits r http://o To help simplify your prototyping, we offer low-cost Designer’s Kits for many of our products. Each contains an assortment of in-stock values along with detailed product specifications. We even provide free refills for parts you use most often.

Contextual Info: Document 617 -1 Square Air Core Inductors • Excellent Q factors – up to 130 • Current handling as high as 4.4 Amps! • 20 inductance values from 5.5 to 27 nH • Flat top and bottom for reliable pick and place and mechanical stability • All values available in 2% tolerance

Contextual Info: AIR CORE INDUCTORS Aerospace Grade Air Core Inductors AE360RAS AE372RAS AE392RAS • Excellent Q factors – up to 130 ■ Current handling as high as 4.4 Amps! ■ 15 inductance values from 6.0 to 27 nH at 5% and 2% ■ Designed to operate in ambient temperatures up to 155°C.

Contextual Info: Document 617 -1 Square Air Core Inductors • Excellent Q factors – up to 130 • Current handling as high as 4.4 Amps! • 15 inductance values from 6.0 to 27 nH Designer’s Kit C424 contains 10 each of all values Terminations RoHS compliant tin-silver over copper