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NPT2022 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NPT2022		M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 48V 100W DC-2GHZ	Original	PDF	1.75MB
NPT2022-SMBPPR		M/A-Com	RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR NPT2022	Original	PDF	1.75MB

NPT2022 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package	Original	npt2022 nds-038	PDF
XMT031B5012 Abstract: ATC100B5R6 Contextual Info: NPT2022 Preliminary Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Plastic Package	Original	npt2022 npt2010 50application nds-038 +2xmt031b5012 atc100b5r6	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package

Original

npt2022 nds-038

PDF

XMT031B5012

Abstract: ATC100B5R6
Contextual Info: NPT2022 Preliminary Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Plastic Package

Original

npt2022 npt2010 50application nds-038 +2

PDF