XMT031B5012 Search Results

XMT031B5012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package	Original	NPT2022 NPT2022 NDS-038	PDF
Contextual Info: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package	Original	NPT2010 NPT2010 NDS-034	PDF
Contextual Info: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package	Original	NPT2010 NPT2010 NDS-034	PDF
XMT031B5012 Abstract: ATC100B5R6 Contextual Info: NPT2022 Preliminary Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Plastic Package	Original	NPT2022 NPT2010 50application, NDS-038 XMT031B5012 ATC100B5R6	PDF