08N10 Search Results

08N10

Abstract: P-TO252 SPD08N10 SPU08N10 A16H
Contextual Info: Preliminary Data SPD 08N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated

Contextual Info: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated

P-TO252

Abstract: SPD08N10 SPU08N10
Contextual Info: SPD 08N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches