08FEB10 Search Results

ST-22

Contextual Info: 107-68596 Packaging Specification 08Feb10 Rev F Card Bus 1. PURPOSE 目的 Define the packaging specifiction and packaging method of Card Bus. 订定 Card Bus 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 Product Part No. Description

Mini RJ21 connector

Abstract: rj21 cable connector RJ45 modular jack 6 RJ21 connector RJ21
Contextual Info: 107-68512 Packaging Specification 08Feb10 Rev W CABLE ASSY,MINI-RJ21 1. PURPOSE 目的 Define the packaging specifiction and packaging method of CABLE ASSY,MINI-RJ21. 订定 CABLE ASSY,MINI-RJ21 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

WKP 3n3 M

Abstract: IEC 384-14 II 0051V Icel 183 CP
Contextual Info: WKP Vishay Draloric Ceramic AC Capacitors Class X1, 760 VAC/Class Y1, 500 VAC D Max. S Max. DESIGN Disc capacitors with epoxy coating 3 Max. RATED VOLTAGE UR X1 : 760 VAC, 50 Hz (IEC 60384-14.2) (Y1): 500 VAC, 50 Hz (IEC 60384-14.2) L = 30- 3 or L = 10 ±1

183 CP

Contextual Info: WKP Vishay Draloric Ceramic AC Capacitors Class X1, 760 VAC/Class Y1, 500 VAC D Max. S Max. DESIGN Disc capacitors with epoxy coating 3 Max. RATED VOLTAGE UR X1 : 760 VAC, 50 Hz (IEC 60384-14.2) (Y1): 500 VAC, 50 Hz (IEC 60384-14.2) L = 30- 3 or L = 10 ±1

65728

Contextual Info: SQM75P03-07 Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET - 30 RDS(on) (Ω) at VGS = - 10 V 0.007 ID (A) - 75 Configuration

IEC60065

Abstract: F339M X2
Contextual Info: F339M X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type l l w FEATURES w h • 7.5 mm to 52.5 mm lead pitch • Available loose in box taped on ammopack or reel • Compliant to RoHS directive 2002/95/EC h h' F' lt Ød

Contextual Info: TS63 Vishay Sfernice Multi-Turn Surface Mount 1/4" Square Cermet Trimmers, Fully Sealed FEATURES • 0.25 W at 70 °C • Industrial grade • Multi-turn operation • A low contact resistance variation down to 2 % Rn • Low end contact resistance (1  typical)

WKP 3n3 M

Abstract: WKP vishay IEC 384-14 II 40 100 21 WKP102 DE-1-11002-A1 101 Ceramic Disc Capacitors 3n3 M Y1 capacitor VKP WKP152CPKR
Contextual Info: WKP Vishay Draloric Ceramic AC Capacitors Class X1, 760 VAC/Class Y1, 500 VAC D Max. S Max. DESIGN Disc capacitors with epoxy coating 3 Max. RATED VOLTAGE UR X1 : 760 VAC, 50 Hz (IEC 60384-14.2) (Y1): 500 VAC, 50 Hz (IEC 60384-14.2) L = 30- 3 or L = 10 ±1

40114

Contextual Info: TR8 Vishay Sprague Solid Tantalum Chip Capacitors MICROTAN Low ESR, Leadframeless Molded FEATURES • 0603 and 0805 footprint • Lead Pb -free face-down terminations • 8 mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3 7" [178 mm] standard

Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI

Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI

dfn4 p-channel mosfet

Contextual Info: SiP32431 Vishay Siliconix 1.0 A Slew Rate Controlled Load Switch with Reverse Blocking in SC70-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION FEATURES The SiP32431 is a slew rate controlled high side switch with reverse blocking capability. The switch is of a low ON

Contextual Info: TS63 Vishay Sfernice Multi-Turn Surface Mount 1/4" Square Cermet Trimmers, Fully Sealed FEATURES • 0.25 W at 70 °C • Industrial grade • Multi-turn operation • A low contact resistance variation down to 2 % Rn • Low end contact resistance (1  typical)

SiA433EDJ

Contextual Info: SPICE Device Model SiA433EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

4810 mosfet

Contextual Info: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si2319ES

Abstract: SQ2319ES-T1-GE3 SQ2319ES P-Channel TrenchFET Power MOSFET SOT-23 sd marking 8H S10 SOT23 MARKING 8h marking SQ2319
Contextual Info: New Product SQ2319ES Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

TS63

Abstract: TS63X TS63Y TS63Z
Contextual Info: TS63 Vishay Sfernice Multi-Turn Surface Mount 1/4" Square Cermet Trimmers, Fully Sealed FEATURES • 0.25 W at 70 °C • Industrial grade • Multi-turn operation • A low contact resistance variation down to 2 % Rn • Low end contact resistance (1  typical)

65820

Contextual Info: SPICE Device Model SiS452DN Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S10031

Abstract: SiR802DP
Contextual Info: SPICE Device Model SiR802DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SiHFU014

Abstract: IRFR014 S10 diode IRFU014 SiHFR014 SiHFR014-E3
Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)

Contextual Info: SPICE Device Model SiR862DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SQM120N04

Abstract: SQM120N04-1M7L-GE3
Contextual Info: SQM120N04-1M7L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0017 RDS(on) (Ω) at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET

Contextual Info: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI

VISHAY MARKING LFXXX

Contextual Info: SiP4282 Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION FEATURES The SiP4282 series is a slew rate controlled high side switch. The switch is of a low ON resistance P-Channel MOSFET that supports continuous current up to 1.2 A.