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    SOURIAU-SUNBANK S5634S2508CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics S5634S2508CN-109
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    RS S5634S2508CN-109 Bulk 16 Weeks 50
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    • 100 $60.79
    • 1000 $58.87
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    SOURIAU-SUNBANK S56321808CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics S56321808CN-109
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    RS S56321808CN-109 Bulk 16 Weeks 50
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    SOURIAU-SUNBANK S5634S1708CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics S5634S1708CN-109
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    RS S5634S1708CN-109 Bulk 16 Weeks 50
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    SOURIAU-SUNBANK S5634R1708CN-109

    Circular MIL Spec Backshells ADAPTER ASSEMBLY
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    Mouser Electronics S5634R1708CN-109
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    • 100 $183.54
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    RS S5634R1708CN-109 Bulk 16 Weeks 50
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    Atmel Corporation AT24RF08CN-10SC

    1K X 8 DUAL ACCESS EEPROM WITH RFID AND SERIAL INTERFACES
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    Bristol Electronics AT24RF08CN-10SC 2,300 1
    • 1 $2.51
    • 10 $1.63
    • 100 $1.18
    • 1000 $1.08
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    08CN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    08CN10N

    Abstract: ds 1-08 diode IEC61249-2-21 IPP08CN10N JESD22 PG-TO220-3 C95T
    Contextual Info: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		ipb08cn10nipi08cn10nipp08cn10niec61249-2-21+7pg-to263-3pg-to262-3pg-to220-308cn10nds 1-08 diodejesd22c95t PDF

    08CN10N

    Abstract: IPP08CN10N JESD22 PG-TO220-3 08CN10 08cn
    Contextual Info: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		ipb08cn10nipi08cn10nipp08cn10npg-to263-3+6pg-to262-3pg-to220-308cn10njesd2208cn1008cn PDF

    08CN10N

    Contextual Info: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		ipb08cn10nipi08cn10nipp08cn10npg-to263-3+208cn10npg-to262-3 PDF

    08cn10n

    Abstract: IPB08CN10N G IPP08CN10N to262 pcb footprint PG-TO220-3 JESD22
    Contextual Info: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		ipb08cn10nipi08cn10nipp08cn10npg-to263-3+6pg-to262-3pg-to220-308cn10nipb08cn10n gto262 pcb footprintjesd22 PDF

    08CN10N

    Contextual Info: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb08cn10nipi08cn10nipp08cn10npg-to263-3+208cn10npg-to262-3 PDF

    08cn10n

    Abstract: IPP08CN10N JESD22 PG-TO220-3
    Contextual Info: 08CN10N G 08CN10N G OptiMOS 2 Power-Transistor 08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)


    Original     		ipb08cn10nipi08cn10nipp08cn10npg-to263-3+4pg-to262-3pg-to220-308cn10njesd22 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    D475A

    Abstract: IPP08CN10L JESD22 PG-TO220-3 08CN10
    Contextual Info: 08CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS • N-channel, logic level R DS on ,max 8 m: ID 98 A • Excellent gate charge x R DS(on) product (FOM) 100 V • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		ipp08cn10lpg-to220-308cn10ld475a+2jesd2208cn10 PDF