08CN10L Search Results

D475A

Abstract: IPP08CN10L JESD22 PG-TO220-3 08CN10
Contextual Info: 08CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS • N-channel, logic level R DS on ,max 8 m: ID 98 A • Excellent gate charge x R DS(on) product (FOM) 100 V • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant