08A MARKING Search Results

transistor A92

Abstract: TRANSISTOR A42 marking A42 a42 CHANGJIANG a42 TRANSISTOR a92 TRANSISTOR ic for cd rom FMQT4292 transistor BR A92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP

a42 a92 transistor

Abstract: transistor BR A92 transistor a42 FMQT4292 Transistors BR A92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A 4x4×8L DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP z

DSI45-08A

Contextual Info: DSI45-08A Standard Rectifier VRRM = 800 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-08A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

DSI45-16A

Contextual Info: DSI45-08A Standard Rectifier VRRM = 800 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-08A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

DSI45-08A

Abstract: DSI45 DSI45-12A DSI45-16A DSI45-16AR ISOPLUS247 VF800
Contextual Info: DSI45-08A VRRM = I FAV = VF = Standard Rectifier Single Diode 800 V 45 A 1.23 V Part number DSI45-08A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: DSI30-08A Standard Rectifier VRRM = 800 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-08A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: DSP8-08A Standard Rectifier VRRM = 2x 800 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-08A Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

FM24C08A

Contextual Info: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet May. 2011 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.4 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION;

Contextual Info: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet Sep. 2009 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.2 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO

Contextual Info: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet Feb. 2009 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.0 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO

Contextual Info: DSI45-08A VRRM = I FAV = VF = Standard Rectifier Single Diode 800 V 45 A 1.23 V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations Planar passivated chips

ATF-13136-TR1

Abstract: transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D
Contextual Info: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-343, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to

4N0408

Contextual Info: IPG20N04S4-08A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on ,max4) 7.6 mΩ ID 20 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

EV50

Contextual Info: 8 A 4 5 V T jw 1 5 0 V Fully Molded sim ilar to TO-220AB f° FC H S 08A 045 ttfl* Nihon Inter Electronics Corporation Specification i/s y Construction Application h^r — K Schottky B arrier Diode rHjjnliiSSÈÔÎîffl H igh Frequency Rectification MAXIMUM RATINGS T a —25°C: U nless otherw ise specified

ISL9008IEMZ

Abstract: MARKING VO MARKING CAW CAY transistor sd caw sc70-5 ISL9008 "MARKING VO"
Contextual Info: ISL9008 NS DESIG W E N PART F OR NDED ACEM ENT E M M L ECO RE P Datasheet NO T R MENDED 08A M O ISL90 REC March 11, 2008 FN9235.1 Low Noise LDO with Low IQ and High PSRR Features ISL9008 is a high performance single low noise, high PSRR LDO that delivers a continuous 150mA of load current. It has

HS508

Abstract: 108RAD
Contextual Info: S E M I C O N D U C T O R HS-508ARH/883S S IGN ES WD NE FOR H D E R END 08A Analog September 1997 OMM ee HS-5 C E S R NOT Features Radiation Hardened 8 Channel CMOS Multiplexer with Overvoltage Protection Pinouts • This Circuit Is Processed in Accordance to MIL-STD883 and Is Fully Conformant Under the Provisions of

KSV864T4XXX

Abstract: KSV684T4xxx ksv684t
Contextual Info: 128Mb:x4,x8,x16 SDRAM TinyBGA SYNCHRONOUS DRAM FEATURES • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge

ELF850

Abstract: ELF650H ELF850M ELF850C ELF650B ELF850B ELF850Y ELF850D ELF860C ELF656V
Contextual Info: Line Filters • Series V ● Type 290 Dimensions in mm not to scale Recommended PWB piercing plan Marking 4-f1.2±0.1 21.5±1.0 2 21.0±1.0 16.0±1.0 3 13.00±0.05 10.0±0.5 4.0±1.0 13.0±0.5 10.00±0.05 4 1 4-f0.8±0.1 Examples Part No. Marking ELF18D290H

ELF850

Abstract: ELF860C ELF656V ELF650B ELF850C ELF850B elf666a ELF656Y ELF18D860B ELF650C
Contextual Info: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5  ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1

ELF850

Abstract: ELF450A ELF850B ELF850C ELF860 ELF650H ELF860C ELF650B ELF850W ELF650M
Contextual Info: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5  ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1

1.14.002

Contextual Info: Data Sheet 1.14.002.-MICON 5 Short-travel Keyswitches , , , Data Sheet MICON 5 Short-travel Keyswitches and Accessories , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,

MARKING SEIKO

Contextual Info: Table of Contents F e a tu re s. 1 Pin A ssignm ent. 1 Pin F unctions. 1

PE4220

Abstract: PE4220-08MSOP-2000C PE4220-08MSOP-50A PE4220-EK PE4220-08-MSOP
Contextual Info: PRELIMINARY SPECIFICATION PE4220 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4220 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 2.5 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL