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    06YW Search Results

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    WEE STD06Y-W

    WIRE LABELS & MARKERS STD06Y-W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD06Y-W Tray 18,300 4,200
    • 1 -
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    • 10000 $0.04
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    Coolgear Inc CM-100706YWBSTK

    10Ft Cat6 UTP Ethernet Network B
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    DigiKey CM-100706YWBSTK 2,325 1
    • 1 $7.48
    • 10 $6.73
    • 100 $5.98
    • 1000 $5.98
    • 10000 $5.98
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    Coolgear Inc CM-100606YWBSTK

    10Ft Cat5E Shielded (FTP) Ethern
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    DigiKey CM-100606YWBSTK 2,176 1
    • 1 $7.60
    • 10 $6.84
    • 100 $6.08
    • 1000 $6.08
    • 10000 $6.08
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    Coolgear Inc CM-100506YWBSTK

    10Ft Cat5E UTP Ethernet Network
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    DigiKey CM-100506YWBSTK 1,401 1
    • 1 $5.33
    • 10 $4.80
    • 100 $4.26
    • 1000 $4.26
    • 10000 $4.26
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    Coolgear Inc CM-100106YWBSTK

    6Ft Cat6 UTP Ethernet Network No
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    DigiKey CM-100106YWBSTK 699 1
    • 1 $4.58
    • 10 $4.12
    • 100 $3.66
    • 1000 $3.66
    • 10000 $3.66
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    06YW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11 PDF

    Contextual Info: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STP6506 STC6506 -30V/-2 105mohm STP6506 PDF

    SPP6506S26RG

    Abstract: SPP6506 P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW
    Contextual Info: SPP6506 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP6506 SPP6506 SPP6506S26RG P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW PDF