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    06YW Search Results

    06YW Datasheets (1)

    Jiangsu JieJie Microelectronics Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JEUR3006YW
    		Jiangsu JieJie Microelectronics Co Ltd JEUR3006YW is an ultrafast recovery rectifier in TO-3PF package with 600V maximum repetitive peak reverse voltage, 30A average forward current, low forward voltage drop, and soft recovery characteristics for high-efficiency power applications. Original PDF
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    06YW Price and Stock

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    WEE STD06Y-W

    WIRE LABELS & MARKERS STD06Y-W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD06Y-W Tray 18,300 3,900
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    • 10000 $0.04
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    Coolgear Inc CM-100606YWBSTK

    10Ft Cat5E Shielded (FTP) Ethern
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    DigiKey CM-100606YWBSTK 610 1
    • 1 $7.60
    • 10 $6.84
    • 100 $6.08
    • 1000 $6.08
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    POWELL ELECTRONICS STD06Y-W

    WIRE MARKER CLIP-ON YELLOW
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    DigiKey STD06Y-W Bulk 250 250
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    Coolgear Inc CM-100506YWBSTK

    10Ft Cat5E UTP Ethernet Network
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    DigiKey CM-100506YWBSTK 243 1
    • 1 $5.33
    • 10 $4.80
    • 100 $4.26
    • 1000 $4.26
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    Tripp Lite N201-006-YW

    CABLE MOD 8P8C PLUG TO PLUG 6'
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    DigiKey N201-006-YW Bulk 240 1
    • 1 $7.14
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    • 1000 $4.38
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    Avnet Americas N201-006-YW Bulk 8 Weeks 10
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    • 10 $4.23
    • 100 $3.79
    • 1000 $3.70
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    Mouser Electronics N201-006-YW 2
    • 1 $7.16
    • 10 $5.76
    • 100 $5.03
    • 1000 $4.21
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    RS N201-006-YW Bulk 1
    • 1 $5.98
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    Master Electronics N201-006-YW 3
    • 1 $5.96
    • 10 $5.42
    • 100 $4.27
    • 1000 $3.85
    • 10000 $3.76
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    Neutron USA N201-006-YW 40
    • 1 $9.99
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    06YW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11 PDF

    Contextual Info: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STP6506 STC6506 -30V/-2 105mohm STP6506 PDF

    SPP6506S26RG

    Abstract: SPP6506 P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW
    Contextual Info: SPP6506 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP6506 SPP6506 SPP6506S26RG P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW PDF