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    Coolgear Inc

    Coolgear Inc CM-100606YWBSTK

    10Ft Cat5E Shielded (FTP) Ethern
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CM-100606YWBSTK 2,239 1
    • 1 $7.24
    • 10 $6.52
    • 100 $5.79
    • 1000 $5.79
    • 10000 $5.79
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    Coolgear Inc CM-100706YWBSTK

    10Ft Cat6 UTP Ethernet Network B
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    DigiKey CM-100706YWBSTK 1,514 1
    • 1 $7.12
    • 10 $6.41
    • 100 $5.70
    • 1000 $5.70
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    Coolgear Inc CM-100506YWBSTK

    10Ft Cat5E UTP Ethernet Network
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CM-100506YWBSTK 1,512 1
    • 1 $5.08
    • 10 $4.57
    • 100 $4.06
    • 1000 $4.06
    • 10000 $4.06
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    Coolgear Inc CM-100106YWBSTK

    6Ft Cat6 UTP Ethernet Network No
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CM-100106YWBSTK 709 1
    • 1 $4.36
    • 10 $3.92
    • 100 $3.49
    • 1000 $3.49
    • 10000 $3.49
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    Coolgear Inc CM-100406YWBSTK

    15Ft Cat5E UTP Ethernet Network
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CM-100406YWBSTK 463 1
    • 1 $7.24
    • 10 $6.52
    • 100 $5.79
    • 1000 $5.79
    • 10000 $5.79
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    06YW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original
    GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11 PDF

    Contextual Info: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original
    STP6506 STC6506 -30V/-2 105mohm STP6506 PDF

    SPP6506S26RG

    Abstract: SPP6506 P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW
    Contextual Info: SPP6506 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original
    SPP6506 SPP6506 SPP6506S26RG P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW PDF