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Infineon Technologies AG


Infineon Technologies AG IPU06N03LBG Power Field-Effect Transistor, 50A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPU06N03LBG		12,422			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB06N03LB Power Field-Effect Transistor, 50A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB06N03LB		8,777			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPD06N03LBG Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPD06N03LBG		7,957			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB06N03LBG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB06N03LBG		5,177			1 - 10 - 100 - 1000 - 10000 -	Get Quote

06N03LB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PG-TO251-3 Abstract: IPS06N03LB IPU06N03LB JESD22 06N03 Contextual Info: 06N03LB OptiMOS 2 Power-Transistor 06N03LB Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 5.8 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipu06n03lb ips06n03lb pg-to251-3-11 pg-to251-3 +306n03lb jesd22 06n03	PDF
06N03L Abstract: Q67045-A5050 06n03 Contextual Info: 06N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.3 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb06n03lb p-to263-3 q67045-a5050 06n03lb +206n03l 06n03	PDF
06N03 Abstract: IPD06N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Contextual Info: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd06n03lb pg-to252-3-11 q67042-s4263 06n03lb +306n03 jesd22 p-to252-3-11	PDF
06N03 Abstract: 06N03L PG-TO251-3 IPS06N03LB IPU06N03LB JESD22 06N03LB ips06n03 Contextual Info: 06N03LB OptiMOS 2 Power-Transistor 06N03LB Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 5.8 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipu06n03lb ips06n03lb pg-to251-3-11 pg-to251-3 +506n03lb 06n03 06n03l jesd22 ips06n03	PDF
Contextual Info: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd06n03lb pg-to252-3 pg-to252-3-11 06n03lb	PDF
06N03 Abstract: IPD06N03LB JESD22 PG-TO252-3-11 06n03l Contextual Info: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd06n03lb pg-to252-3 pg-to252-3-11 06n03lb +306n03 jesd22 06n03l	PDF
06N03 Abstract: IPB06N03LB JESD22 Contextual Info: 06N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.3 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb06n03lb pg-to263-3 p-to263-3 06n03lb +206n03 jesd22	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
06N03LB Abstract: PG-TO252-3-11 IPD06N03LB Q67042-S4263 Contextual Info: OptiMOS 2 Power-Transistor 06N03LB G 06N03LB G 06N03LB G 06N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level	Original	ipd06n03lb ipu06n03lb ips06n03lb ipf06n03lb +3pg-to252-3-11 06n03lb q67042-s4263	PDF
PG-TO252-3-11 Abstract: TO252-3 IPD06N03LB JESD22 Contextual Info: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipd06n03lb pg-to252-3 pg-to252-3-11 06n03lb +2to252-3 jesd22	PDF