06A00 Search Results

15001LR

Abstract: 20022WS 20022WS-02A00 20022WS-03A00 20022WS-04A00 20022WS-05A00 20022WS-06A00 20022WS-07A00 20022WS-08A00 FFC 0.8mm
Contextual Info: 2.00mm 0.079" PITCH CONNECTOR Material 20022WS Series Wire-to-Board Wafer I/NO 1 2 3 SMT Straight DESCRIPTION WAFER PIN HOOK Available Pin PARTS NO. 20022WS-02A00 20022WS-03A00 20022WS-04A00 20022WS-05A00 20022WS-06A00 20022WS-07A00 20022WS-08A00 20022WS-09A00

12517HS

Abstract: 12517HS-06A00 12517HS-07A00 12517HS-08A00 12517HS-09A00 12517HS-10A00 12517HS-11A00 12517HS-12A00 12517HS-13A00 K 3615
Contextual Info: 1 .2 5 mm 0.049" PITCH CONNECTOR 12517HS Series Material DIP, NON-ZIF Straight I/NO DESCRIPTION TITLE MATERIAL 1 2 HOUSING TERMINAL 12517HS 12517TS PBT.UL 94V Grade Phosphor Bronze & Tin plated Available Pin PARTS NO. 12517HS-06A00 12517HS-07A00 12517HS-08A00

20015LR

Abstract: 20022WR-04A00 20022WR02 20022WR 20022WR-02A00 20022WR-03A00 20022WR-05A00 20022WR-06A00 20022WR-07A00 20022WR-08A00
Contextual Info: 2.00mm 0.079" PITCH CONNECTOR Material 20022WR Series Wire-to-Board Wafer I/NO 1 2 3 SMT Right Angle DESCRIPTION WAFER PIN HOOK TITLE 20022WR 20015LR Available Pin PARTS NO. 20022WR-02A00 20022WR-03A00 20022WR-04A00 20022WR-05A00 20022WR-06A00 20022WR-07A00

D2012

Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2

S1365

Contextual Info: SAW Bandpass Filter 252851B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions

S1365

Abstract: 00MHZ
Contextual Info: Bandpass Filter 254451B 1. Features z IF bandpass filter z Low-Loss Filter z Single-ended operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimension

10840

Abstract: D2012
Contextual Info: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters

S1365

Contextual Info: Bandpass Filter 232251B 1. Specifications Fo = 75 MHz Terminating source impedance : 50Ω and matching network Terminating load impedance : 50Ω and matching network Operating temperature range : -30℃ ~ +80℃ Minimum Typical Maximum MHz - 75.0 - dB - 12.5

D2012

Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

20PF

Abstract: D2012 252101
Contextual Info: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters

Contextual Info: SAW Bandpass Filter 251102B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 2.5±0.2 17.7±0.2 7.6±0.2 0.45±0.05 5.5max 6.0max

transistor d2012

Abstract: D2012
Contextual Info: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2

D2012

Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2

4914 smd

Contextual Info: SAW Bandpass Filter 252052B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 2.30±0.1 2. Package Dimension 20.00±0.2 9.80±0.2

A81DC

Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

M29W128GL

Abstract: M29W128GH70 M29W128G M29W128GL7
Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

S700 Series

Abstract: mil-std RG-179 SPECIFICATION en3682 MIL-C-83527 Axon Cable MIL-C-17-176 8660-3035 MIL-C-17176 M22520/2-23 MIL 83527
Contextual Info: S700 Series Applications Description Mechanical and electrical interface between on-board military avionics equipments and racks • Rectangular connector • Three sizes of shells • A large number of insulators with integral signal, power, coaxial and triaxial contacts

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

FAA064

Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Contextual Info: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and