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Infineon Technologies AG


Infineon Technologies AG BSC066N06NSATMA1 MOSFETs IFX FET 60V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSC066N06NSATMA1		7,728			1 $1.23 10 $0.57 100 $0.51 1000 $0.38 10000 $0.29	Buy Now
Infineon Technologies AG BSC066N06NS MOSFETs IFX FET 60V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSC066N06NS		7,507			1 $1.36 10 $0.84 100 $0.55 1000 $0.38 10000 $0.29	Buy Now

066N06N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPB066N06N IPP066N06N C2320 Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPI070N06N IEC61249-2-21 IPB066N06N P-TO263-3-2 P-TO263-3 IEC61249-2-21 IPP066N06N C2320	PDF
DD 127 D TRANSISTOR Abstract: IPB066N06N IPP066N06N g33 smd 860 Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPI070N06N IPB066N06N P-TO263-3 P-TO263-3-2 P-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860	PDF
Contextual Info: Type 066N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications	Original	BSC066N06NS IEC61249-2-21 066N06NS	PDF
DD 127 D TRANSISTOR Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPB066N06N P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N DD 127 D TRANSISTOR g33 smd 860 066N06N PG-TO220-3	PDF
DD 127 D TRANSISTOR Abstract: IPB066N06N IPP066N06N g33 smd 860 Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPI070N06N IPB066N06N PG-TO263-3 P-TO263-3-2 PG-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860	PDF