06 DIODE Search Results

ixys dsei 12-12

Abstract: ixys dsei 60-06 ixys dsei 60-12 ixys 60-02 DWEP ixys dsei 12-06 IXYS DSEI 2
Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips Type TVJM = 150°C VF ¬ @ IF TJ = 25°C V A DWEP 27 - 02 DWEP 37 - 02 DWEP 77 - 02 1.15 1.10 1.20 32 100 125 DWEP 8 - 06 DWEP 12 - 06 DWEP 15 - 06 DWEP 23 - 06 DWEP 25 - 06 DWEP 35 - 06 DWEP 55 - 06 DWEP 75 - 06 1.7

DWEP

Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips Type V«, min *. 1 > 2 5 aC Tyja = Î50°C V DWEP 27 -02 OWEP 37 -0 2 DWEP 77 -02 200 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 -06 12 -06 1 5 -0 6 23 -06 25 -06 35 -06 55 -06 75 -06 600 DWEP DWEP DWEP DWEP DWEP DWEP

aba diode

Contextual Info: BZW 06-5V8 . BZW 06-376 BZW 06-5V8B . BZW 06-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage

mee transient

Abstract: 95-06DA
Contextual Info: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

Contextual Info: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 3 TO-240 AA Type 2 MEA95-06 DA 1 VRRM = 600 V IFAV = 95 A = 250 ns trr 2 MEK 95-06 DA 3 1 2 Symbol Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C

E78996 Diode

Abstract: E78996
Contextual Info: Power Modules International SS Rectifier Thyristor/Diode, Fast Part Number 6 (7) (8) (9) Vr r m VDRM (V) IRKHF72-06 IRKHF72-08 IRKHF72-10 IRK4F72-12 IRKKF72-06 IRKKF72-08 IRKKF72-10 IRKKF72-12 IRKLF72-06 IRKLF72-08 IRKLF72-10 IRKLF72-12 IRKNF72-06 IRKNF72-08

P80NF550

Abstract: P80NF5 B80NF P80NF
Contextual Info: STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005Ω - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF55-06 55V <0.0065Ω 80A (1) STB80NF55-06-1 55V <0.0065Ω STP80NF55-06

p80nf55

Abstract: p80nf55-06 STB80NF55 b80nf55-06 P80NF TF-417 b80nf55 P80NF5 P80nf55 MOSFET B80NF55-06-1
Contextual Info: STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005Ω - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF55-06 55V <0.0065Ω 80A (1) STB80NF55-06-1 55V <0.0065Ω STP80NF55-06

Contextual Info: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A MEE 95-06 DA trr = 250 ns 3 TO-240 AA 2 VRSM V 600 VRRM V 1 Type MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 Symbol Test Conditions I FRMS I FAV ¬ I FRM Tcase = 75°C

eon f80

Abstract: 9T16 1850NM ICM50
Contextual Info: ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V PSIG 50/06 PSI 50/06* PSIS 50/06* PSSI 50/06* LN 9 S18 A1 JK 10 OP 9 PSIG PSI L 9 PSI 50/06* PSIG 50/06 E 2 PSIS 50/06*

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA VRRM = 600 V lFAV = t[r = 250 ns TO-240 AA V_ V_ 600 MEA95- 06 DA 600 1 2 95 A 3 MEK 95- 06 DA 3 1 2 3 i_ - i i _ Symbol Test C onditions

hv102

Abstract: 1N5219 HV15F 1jla10 SOT23-6 .S5 1N3225 2SK SOT23 250n 1n3257 HV-30F
Contextual Info: HIGH•SPEED DIODES Item Number Part Number 10 Max VRRM A (Y) t.,. Max (s) VF IF Max @ Test (V) (A) Package Style 5 10 ~~~~~:g: 15 20 HV5-5F ESJASS-06 ESJA25-06 ESJA54-06 ESJA5S-06 HVS-7F ESJASS-OS ESJA25-0S ~~~~~:g: 25 30 35 40 ESJAS2-10 ESJA25-10 ESJA52-10

b80nf55-06

Abstract: p80nf55 P80NF55-06 P80NF P80NF5 P80nf55 MOSFET p80n B80NF5506
Contextual Info: STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005Ω - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS @Tjmax STB80NF55-06 55V RDS(on) ID <0.0065Ω 80A (1) 80A(1) STB80NF55-06-1 55V

14T60

Contextual Info: ECO-PACTM 2 IGBT Module PSIG PSI PSIS PSSI Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet IC25 = 24.5 A VCES = 600 V VCE sat typ. = 2.4 V 25/06 25/06* 25/06* 25/06* LN 9 S18 A1 JK 10 P 9 L 9 PSIG 25/06 PSI 25/06* G 10 NTC X 16 X 18 Symbol

semikron skkt 55

Abstract: semikron skkt 200 skkt 120 skkt 40 12 semipack skkt 40 semikron semipack skkt 57B SKKT 56/12 E SEMiPACK skkt 1000 skkt 56
Contextual Info: VRSM VRRM dv/ SEMIPACK 1 Thyristor / Diode Modules ITRMS (maximum value for continuous operation VDRM dt)cr 95 A ITAV (sin. 180; Tcase = 74°C) V V 500 700 400 600 V/µs 60 A – – 500 500 SKKT 56/06 D SKKT 57/06 D SKKH 56/04 D SKKH 56/06 D – SKKH 57/06 D

DWEP

Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips VRRM min Type mA u TJ= 12S-C v .-w v * , mA DWEP 27 -02 DWEP 37 -02 DWEP 77 -02 200 100 150 500 0.2 0,35 0.65 5 11 20 54 91 244 85 70 70 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 12 15 23 25 35 55 75 -06 -06 -06 -06

95-06DA

Contextual Info: DIXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA RRM 'FAV t rr = 600 V = 95 A = 250 ns TO-240 AA 600 RRM Type V MEA95-06 DA 600 1 Symbol Test Conditions ^FRMS Ifav 1 Ifrm Tease = T case = Ifsm T VJ l2t MEK 95-06 DA 2 1 2 Maximum Ratings

P80NF55

Abstract: P80NF55-06 P80nf55 MOSFET P80NF5 B80NF55-06 STP80NF55 STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP
Contextual Info: STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/I²PAK/D²PAK STripFET II POWER MOSFET TYPE VDSS RDS on ID STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP 55 V 55 V 55 V <0.0065 Ω <0.0065 Ω <0.0065 Ω

Contextual Info: s e m ik r o n VRSM V rrm <dv/ V d RM dt cr V Itav sin. 180; Tease = 68 ^C) 48 A V/(iS V SEMIPACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 75 A 500 400 500 700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D SKKH 42/06 D

A2 diode

Abstract: BAS40-04 DIODE marking A2 Marking Stempelung Diode BAS40 BAS40-05 BAS40-06
Contextual Info: BAS40, BAS40-04, BAS40-05, BAS40-06 BAS40, BAS40-04, BAS40-05, BAS40-06 Surface Mount Schottky Barrier Single/Double Diodes Schottky-Barrier Einzel-/Doppel-Dioden für die Oberflächenmontage Version 2005-06-21 1.1 2.9 ±0.1 0.4 1.3 2.5 Type Code ±0.1 max

transistor NTC 1,0

Abstract: 206 100 psig
Contextual Info: ECO-PACTM 2 IGBT Module PSIG 130/06 PSIS 130/06* PSSI 130/06* PSI 130/06* IC25 = 121 A VCES = 600 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet L9 E2 NTC X15 K10 X16 NTC VX 18 X16 PSI 130/06* IK 10 NTC L9 T16 X15 X13

semikron semipack skkt 57B

Abstract: SKKT 56/12 E SKKT 57/12 E semikron skkt 56/14e skkh 57/06d skkt 56/12 SKKT 56/16 E semikron skkh 57/16e semikron skkt 55 semikron skkt
Contextual Info: VRSM VRRM dv/ VDRM dt cr V V SEMIPACK 1 Thyristor/ Diode Modules ITRMS (maximum value for continuous operation) 95 A ITAV (sin. 180; Tcase = 74 °C) 60 A V/µs 500 400 500 700 600 500 SKKT 56/06 D SKKT 57/06 D SKKH 56/06 D SKKH 57/06 D 900 800 500 SKKT 56/08 D SKKT 57/08 D1) SKKH 56/08 D

50-90mm

Abstract: 95-06DA
Contextual Info: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A trr = 250 ns 3 TO-240 AA 2 VRSM V 600 V RRM 1 Type V MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 3 Symbol Test Conditions I FRMS IFAV ① I FRM Tcase = 75°C Tcase = 75°C; 180° sine

E78996

Contextual Info: Power Modules In ternatio nal He? R ec tifie r Thyristor/Diode, Fast Part Number Vr r m 3) (4) (5) (6) IRKHF72-06 IRKHF72-08 IRKHF72-10 IRKHF72-12 IRKHF82-02 IRKHF82-04 IRKHF82-06 IRKHF82-08 IRKHF102-06 IRKHF102-08 IRKHF102-10 IRKHF102-12 IRKHF112-02 IRKHF112-04