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    9T16 Price and Stock

    Amphenol Corporation

    Amphenol Corporation MS27479T16C35PB

    - Bulk (Alt: MS27479T16C35PB)
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    Avnet Americas MS27479T16C35PB Bulk 12 Weeks 5
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    • 10 $210.43
    • 100 $73.93
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    Amphenol Corporation MS27479T16C42SA

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    Avnet Americas MS27479T16C42SA Bulk 12 Weeks 5
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    • 10 $251.62
    • 100 $85.77
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    Amphenol Corporation MS27479T16C55SA(LC)

    - Bulk (Alt: MS27479T16C55SA(LC))
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    Avnet Americas MS27479T16C55SA(LC) Bulk 12 Weeks 7
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    • 10 $162.49
    • 100 $160.04
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    Amphenol Corporation MS27479T16C26SB

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    Avnet Americas MS27479T16C26SB Bulk 12 Weeks 5
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    • 10 $208.17
    • 100 $73.18
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    Amphenol Corporation MS27479T16C55SD(LC)

    - Bulk (Alt: MS27479T16C55SD(LC))
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    Avnet Americas MS27479T16C55SD(LC) Bulk 12 Weeks 7
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    • 100 $160.04
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    Find more 9T16 price and stock on Findchips.com

    9T16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    light emitting diode

    Abstract: diode matrix diagram 9T16 TA16-11 TA16-11EWA TA16-11GWA TA16-11HWA TA16-11YWA TC16-11EWA TC16-11GWA
    Contextual Info: Kingbright 37mm 1.4 INCH 5x8 SINGLE COLOR DOT MATRIX DISPLAYS TA16-11 TC16-11 Features Description l1.4 INCH MATRIX HEIGHT. lDOT SIZE 3mm. lLOW CURRENT OPERATION. lHIGH CONTRAST AND LIGHT OUTPUT. lCOMPATIBLE WITH USACII AND EBCDIC CODES. lSTACKABLE HORIZONTALLY AND VERTICALLY.


    Original     		ta16-11tc16-119-t16-29-t16-3+119-t16-49-t16-5light emitting diodediode matrix diagram9t16ta16-11ewata16-11gwata16-11hwata16-11ywatc16-11ewatc16-11gwa PDF

    TC16-11

    Abstract: U T16-5
    Contextual Info: Kingbright 37mm 1.4 INCH 5x8 SINGLE COLOF DOT MATRIX DISPLAYS TA16-11 TC16-11 Features Description •1.4 INCH MATRIX HEIGHT. The Bright Red source color devices are made with Gallium •DO T SIZE 3mm. Phosphide Red Light Emitting Diode. •LO W CURRENT OPERATION.


    OCR Scan     		ta16-11tc16-119-t16-5u t16-5 PDF

    Contextual Info: Advanced Power Electronics Corp. 9T16AGH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as 2.5V D BV DSS Fast Switching Characteristics Low Gate Charge G RoHS-compliant, Halogen-free 20V R DS ON 20mΩ ID 19.5A S Description D (tab)


    Original     		ap9t16agh/j-hf-3ap9t16agh-hf-3o-252o-251+4ap9t16agj-hf-3o-2550ap9t16a9t16agj PDF

    9T16GH

    Abstract: 9T16 9T16G 9T16GH mosfet AP9T16GH
    Contextual Info: 9T16GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 25mΩ ID G 25A S Description Advanced Power MOSFETs from APEC provide the


    Original     		ap9t16gh/jo-252o-2519t16gj+59t16gh9t169t16g9t16gh mosfetap9t16gh PDF

    Contextual Info: 9T16GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D BVDSS 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 25m ID G 25A S Description Advanced Power MOSFETs from APEC provide the


    Original     		ap9t16gh/jo-252o-2519t16gj PDF

    9T16GH

    Abstract: 9T16GH mosfet
    Contextual Info: Advanced Power Electronics Corp. 9T16GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as 2.5V D Fast Switching Characteristics 20V R DS ON Low Gate Charge G RoHS-compliant, Halogen-free BV DSS 25mΩ ID 25A S Description G Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		ap9t16gh/j-hf-3o-252ap9t16gh-hf-3o-251+5ap9t16gj-hf-3ap9t169t16gj9t16gh9t16gh mosfet PDF

    9T16

    Abstract: 9T1600
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 16M x 9 Bit Dynamic Random Access Memory Module The MCM91600 is a dynamic random access memory DRAM module organized as 16,777,218 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of nine MCM517400 DRAMs housed in 400 mil J-lead small out­


    OCR Scan     		mcm9160030-leadmcm517400mcm91600s60+6mcm91600s70mcm91600sg60mcm91600sg709t1600mcm9t1600s609t16 PDF