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    05CN10N

    Abstract: IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N JESD22 PG-TO220-3 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3 PDF

    05CN10N

    Abstract: IEC61249-2-21 IPP05CN10N JESD22 PG-TO220-3 DIODE D100 to220
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N IEC61249-2-21 JESD22 PG-TO220-3 DIODE D100 to220 PDF

    05CN10N

    Abstract: 05cn10 IPP05CN10N JESD22 PG-TO220-3
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    05CN10N

    Abstract: 05cn10 IPB05CN10NG
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10 IPB05CN10NG PDF

    05CN10N

    Abstract: 05cn10
    Contextual Info: 05CN10N G 05CN10N G 05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10 PDF