05D433 Search Results

THD6924

Abstract: THD6919 THD6916 041 itt diode THD6916 allegro Zener diode itt THZ825A THZ827A itt 041 Zener Diodes 6.2 V
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 05D433A QQDbS35 E S 3 ■ ALGR DIODES Z en er D io d e s T em perature - Com pensated Device Type Temperature Coefficient Test Max. Temperatures VZ@ 'z r Z z T @ lz T Nom. 'Z T Max. V (mA) (Í2) ( + ppm/ C) (°C) ( ± mV/°C)

AUO-PL321.15

Abstract: B456+F+15 DIODE+C06+15 itt+zx+15 murata+filter+cfj455k+15 zener+phc+15
Contextual Info: ALL E GR O M I C R O S Y S T E M S Ö514019 SPRAGUE. INC ^3 D • 05D433S SEMICONDS / ICS 0 0 Q 3 h l 0 b ■ ALGR 93D 03610 ]> SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at TA = 25°C VgS OH Limils

Contextual Info: AL L E G R O M I C R O S Y S T E M S INC T3 8 5 1 4 0 1 9 S P R A GU E. D • 05D433Ö DGDBSTÔ S E M I C O N D S / ICS T ■ ALGR 9 3 D 0 3 5 98 J> _ ' ^ ¿ 7 - 1 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘M PS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C

1N3070

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi­ taxial diode with 1N3070 high-speed sw itching char­ acteristics. It has a typical breakdow n-voltage rating

A1396

Contextual Info: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­

Contextual Info: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap­ plications at frequencies of up to 450 MHz.

2n3904 2n3906

Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Contextual Info: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

Contextual Info: AM SIGNAL PROCESSOR Providing the AM signal processing functions for an electronicallytuned AM receiver ETR , the ULN3841A includes a balanced mixer, buffered local oscillator, IF amplifier, AM detector, scan control detec­ tors, and a switchable voltage regulator. The addition of a JFET

603 transistor npn

Abstract: BT 316 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —

Contextual Info: 8-C H AN N EL SOURCE D R IV E R S This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series UDN2580A/LW source drivers can drive incandescent, LED, or vacuum

EM- 546 motor

Contextual Info: HIGH-CURRENT HALF-BRIDGE M OTOR DRIVER Designed for use as a general-purpose motor driver, the UDN and UDQ2943Z half-bridge drivers combine high-current sink and source drivers with logic stages, level shifting, diode transient protection, and a voltage regulator for single-supply operation. Capable of operating

Contextual Info: ' ’W • ' ' '' SMOKE D ETEC TO R W IT H IN TE RC O N N E C T NO CONNECT. | I/O 2 LOW -VSET 3 NO CONNECT. 4 LED + SUPPLY 16 1 GUARD2 NC LOGIC NC OSC. & TIMING 5 6 I V DD HORN DRIVER TT| DETECT. IN J4~1 G UARD t ~13~| SENSITIVITY SET J 2~l OSC. CAP. T n HORN 2

Contextual Info: ELECTRICAL CHARACTERISTICS at I At = 25°C V BR CBO VIBRJCEO V(BR)EBO Max. Device Type Marking (V ) TMPT2907A 2F 60 60 TMPT3906 2A 40 40 TMPT4403 2T 40 40 5.0 TMPT5087 2Q 50 50 _ TMPT5401 2L 160 150 5.0 TMPTA56 2G 80 80 4.0 100 NOTES: (V) v CB h FE 'c @ V CE Max. @ lc

ULN8131A

Abstract: ULN8131LW W157 ha1619
Contextual Info: 27467.2’ jLafeJ* A „fcT l* f. r •*■ Y ■I* *# - ■ *v ^ r- ’ PR E C ISIO N SUPERVISORY SYSTEM S M O N ITO R Capable of monitoring four dc power lines, the ULN8131A and ULN8131LW are power-fault monitors for both under-voltage and over-voltage conditions. Two of the four inputs are designed to

TMPZ5254

Contextual Info: NER DIO DE SOT-23/TO -236AB ‘TMPZ’ ZENER DIO DES ELECTRICAL CHARACTERISTICS at T A. = 25°C Zener Voltage Device Min. Nom. Max. Leakage Current Zener Impedance Max @VR Max. ZCT Marking V (V) (V) @'zr (mA) (HA) (V) (Q) @'zr (mA) Pinning Type TMPZ5230

ULQ2824A

Abstract: ULN 2595 A ULN2804A
Contextual Info: HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Featuring continuous load current ratings to 500 mA for each of the eight drivers, the Series ULN28xxA and ULQ28xxA high-voltage, high-current Darlington arrays are ideally suited for interfacing be­ tween low-level logic circuitry and multiple peripheral power loads.

Contextual Info: PRELIMINARY ISSUE 8187 Subject to chanos without notic } Januarv 12 1995 Designed specifically to meet the requirement for extended opera­ tion of battery-powered equipment such as cordless and cellular telephones, the A8187SLT voltage regulator offers the reduced dropout

Contextual Info: 3-PHASE BRUSHLESS D C M OTOR CONTROLLERI DRIVER W ITH LINEAR CURRENT CONTROL _ AND POWER DMOS OUTPUTS The A8925CEB is a DMOS three-phase brushless dc motor con­ troller/driver designed for use in W inchester disk drives and other data storage applications. The power output stages are capable of ±4 A

Contextual Info: HIGH-CURRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER—WITH INTERNAL CURRENT SENSING AND CONTROL The UDN2961B and UDN2961W are 3.4 A half bridges designed specifically for driving solenoid printheads, stepper motors, and dc motors. The UDN2961B/W consists of a power source driver output,

Contextual Info: DUAL FULL-BRIDGE PWM MOTOR DRIVER The UDN2916B, UDN2916EB, and UDN2916LB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and include internal pulse-width modulation PWM

A3506

Contextual Info: , and Data Sheet 27501.1 , 3506 3507 3508 RATIOMETBIC, LINEAR H ALL-EFFECT SENSORS FOR HIGH-TEMPERATVRE OPERATION The A3506-, A3507-, and A3508- comprise a family of sensitive, temperature-stable linear Hall-effect sensors. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the

lc 945 transistor

Abstract: transistor LC 945 2N3904 2N3904 F14 4102 transistor 2n3904 TRANSISTOR PNP transistor 4103
Contextual Info: ALLE&RO N I C R OSYSTEMS INC T3D » 0504330 0003733 0 • AL6R PROCESS TVO Process TVO NPN High-Speed Switching Transistor Process TVO is an NPN double-diffused silicon epitaxial planar device with gold diffusion. It is used as a general-purpose switch and amplifier. The PNP

GH-022

Abstract: UGN3132LL 0091H GH-023 hall 3133 PH-003A MH-002-2
Contextual Info: -> • \ , -H * . ■ *■■■■»> - v 4 v ,' V + r 1 % 'V - ; \ ' V rv ' j , v + * u ' . . V 'U T + v W Ü - ’ 1 ' ■'>^ +• V 'r i r .P » ;* r + l a - I r + 'l -i ♦ + , . H * I * . ' +1»-: 1 . * h. * . *' . .♦ . ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES