04OCT2 Search Results

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3HTS LOC RESERVED. REV I S I O N S D I ST FT LTR DE S C R I P T I O N DWN DATE REVISED EC 0 G 3 B - 0 7 4 6 - 0 4 04OCT2OO4 SW REVISED PER E C O - 06 - 2 70 3

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION LOC I ALL RIGHTS RESERVED. BY - 20 2 3 TYPICAL APPLICATION 1 REVISIONS DIST 2 P A A1 D DWN APVD FIRST ISSUE 17FEB2010 AV GT REVISED MARKS ON -5 WAS MARKED AC 04OCT2011 AV GT REVISED PER ECR-13-009678

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST B LTR DESCRIPTION BA2 DWN DATE ECR-13-015529 APVD TN KR 04OCT2013 2008 RECOMMENDED LAND PATTERN FOR INDUCTANCE VALUES 100µH OR HIGHER 10.3 0.3 2.2 2.2 12.7 1.0 11.0 0.5 0.8 2.5 RELEASED FOR PUBLICATION

BIOS Flash ROM Chip

Abstract: M50FW040 PLCC32 TSOP32
Contextual Info: M50FW040 4-Mbit 512 Kb x8, uniform block 3-V supply firmware hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12V for fast Erase (optional) ■ Two interfaces – Firmware hub (FWH) interface for

Contextual Info: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 m > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

marking code e3

Contextual Info: M95M02-DR 2-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 2 Mb (256 Kbytes) of EEPROM – Page size: 256 bytes SO8N (MN) 150 mil width ■ Write – Byte Write within 10 ms

Contextual Info: L6480 Fully integrated microstepping motor driver with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function

Contextual Info: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA General features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)

tqfp 10x10 tray

Abstract: LQFP32 LQFP44 LQFP64 ST72361 ceramic resonator filter 024 marking bidirectional diode sim 900 application
Contextual Info: ST72361 8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, 2x LINSCI Features • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices

ad574

Contextual Info: Tuesday, Feb 19, 2008 3:27 PM / 12-Bit-ADC with Microprocessor Interface AD574 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as

M50FW040

Abstract: PLCC32
Contextual Info: M50FW040 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations ■ – VPP = 12V for Fast Erase (optional) TWO INTERFACES – Firmware Hub (FWH) Interface for embedded

cpu 226

Abstract: ST72 ST72361 TQFP32 TQFP44 TQFP64 TIM16 062d
Contextual Info: ST72361 8-BIT MCU WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, 2x LINSCI • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C 1 creo 20 ALL RIGHTS RESERVED. BY - COPYRIGHT20 2 3 Creo Parametric 2.0 REVISIONS P DO NOT REVISE EXCEPT BY CAD LTR C DESCRIPTION DATE REVISED DESIGN ECO-13-018731 DWN NCL 04DEC2013 APVD GOJ 25,3 D

mb622

Abstract: led moving message display components joystick switch MB623 ST7LITE39 moving message display with key board lcd message using rf led message board circuits message display on LED scrolling led small
Contextual Info: UM0450 User manual Getting started with the SN2X-PRIMER kit Overview The SN2X-PRIMER kit represents a ready-to-run ZigBee network provided with two network nodes acting as the Coordinator and Router in compliance with standard ZigBee® specifications. Definitions for Coordinator, Router, and other ZigBee® concepts are provided

BAS 3020

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3HTS LOC r CONTACT \T s f1 REV I S I O N S D I ST AD RESERVED. 47 LTR DE S C R I P T I O N V APVD I 3J1JN00 MDL MDL R E V P E R EC O U I B - O I 6 2 - 0 I

AD574 rev A

Abstract: ADC hard radiation AD574-000C AD574 DB9 drawing HTRB test digital logic DB10
Contextual Info: 12-Bit-ADC with Microprocessor Interface AD574 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.

K129

Abstract: TSV6191 SC70-5 v619 k129 amplifier K110 V6192I
Contextual Info: TSV6191, TSV6191A, TSV6192, TSV6192A Rail-to-rail input/output 10 A, 450 kHz CMOS operational amplifiers Features TSV6191ILT - TSV6191ICT • Rail-to-rail input and output ■ Low power consumption: 10 µA typ at 5 V ■ Low supply voltage: 1.5 to 5.5 V

LQFP44

Abstract: TDA7407 TDA7407TR
Contextual Info: TDA7407 Advanced car signal processor Features ● Fully integrated signal processor optimized for car radio applications ● Fully programmable by i2c bus ● Includes audioprocessor, stereo decoder with noise blanker and multipath detector ● Softmute function

transistor EP 430

Abstract: BA157 STC03DE150 BA157 equivalent
Contextual Info: STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features n n n n VCS ON IC RCS(ON) 1V 1.8 A 0.55 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V

Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V

N3NF06L

Abstract: STN3NF06L
Contextual Info: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

Contextual Info: M95128 M95128-W M95128-R 128 Kbit serial SPI bus EEPROM with high speed clock Features • Compatible with SPI bus serial interface positive clock SPI modes ■ Single supply voltage: – 4.5 to 5.5 V for M95128 – 2.5 to 5.5 V for M95128-W – 1.8 to 5.5 V for M95128-R

STGP19NC60WD

Contextual Info: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)

N3NF06

Contextual Info: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description