04N03LA Search Results

P-TO252

Abstract: 04N03 04N03LA IPF04N03LA P-TO252-3-11
Contextual Info: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 4.1 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

04N03LA

Abstract: Q67042-S4177 IPD04N03LA P-TO252-3-11
Contextual Info: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

IPI04N03LA

Abstract: diode kv 1236 IPP04N03LA
Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

diode kv 1236

Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

04N03L

Abstract: 04N03LA
Contextual Info: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mW ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

04n03

Abstract: 04N03LA
Contextual Info: OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ

04N03LA

Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
Contextual Info: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

04n03la

Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
Contextual Info: OptiMOS 2 Power-Transistor 04N03LA 04N03LA 04N03LA 04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A

04N03L

Abstract: Q67042-S4181 marking code br 39 SMD
Contextual Info: 04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPS04N03LA G

Abstract: max5199
Contextual Info: OptiMOS 2 Power-Transistor 04N03LA 04N03LA 04N03LA 04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A

04N03LA

Abstract: SMD MARKING CODE transistor TO262-3-1 IPB04N03LA IPI04N03LA IPP04N03LA d55a1
Contextual Info: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

04n03la

Abstract: IPB04N03LA smd diode marking 77 JESD22 diode kv 1236
Contextual Info: 04N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

to220 pcb footprint

Abstract: to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3
Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 4.2 m: ID 80 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: 04N03LA 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

04N03LA

Abstract: IPB04N03LA IPI04N03LA IPP04N03LA
Contextual Info: 04N03LA 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.9 mΩ ID 80 A • N-channel - Logic level

04N03

Abstract: P-TO252-3-11 04N03LA 04n03l Q67042-S4177 smd code D50 IPD04N03LA IPU04N03LA JESD22 P-TO-252-3-11
Contextual Info: 04N03LA 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel • Logic level

04N03LA

Abstract: SMD TRANSISTOR MARKING code DD IPF04N03LA P-TO252-3-11
Contextual Info: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 4.1 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

Contextual Info: Type OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

diode kv 1236

Abstract: 04N03L
Contextual Info: 04N03LA, 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 4.2 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

J 350 FET

Contextual Info: OptiMOS 2 Power-Transistor 04N03LA G 04N03LA G 04N03LA G 04N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ

Q67042-S4177

Abstract: IPD04N03LA
Contextual Info: 04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)