040204 Search Results

ak17p

Abstract: RISCwatch ACE FLASH mictor layout RISCwatch Trace connector 20 pin FF672 Virtex-II Prototype platform XC3090 XC4005
Contextual Info: Virtex-II Pro Prototype Platform User Guide UG027 / PN 0402044 v1.6 October 25, 2002 R Virtex-II Pro Prototype Platform User Guide www.xilinx.com 1-800-255-7778 UG027 / PN 0402044 (v1.6) October 25, 2002 R "Xilinx" and the Xilinx logo shown above are registered trademarks of Xilinx, Inc. Any rights not expressly granted herein are reserved.

BGY67A

Abstract: DIN45004B
Contextual Info: BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 04 — 14 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

983-495 thermax

Abstract: bj3450 PL75C-201 m27500-22rc2s06 PL155AC-201 305-0042-1 EPD22030F M27500-26RC2S06 PL75MC ASNE 0094
Contextual Info: PRODUCT CATALOG Military, Space and Testing Equipment Emerson Network Power Connectivity Solutions has a wide range of cable assemblies and connectors suited for RF, Microwave and Fiber Optic signal transmission. Connectivity Solutions is a vertically integrated supplier of custom, fixed

BGD812

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

BGD802

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES

CGD1044H

Contextual Info: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

BGD814

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

BGR269

Abstract: DIN45004B
Contextual Info: BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

Contextual Info: Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; optical input with connector; 8 gold-plated in-line leads SOT115V D N2 E S2 Z N1 N3 p M M1 M3 M2 A2 1 2 3 4 5

Contextual Info: Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads SOT115D D E Z A2 1 2 3 4 5 6 7 8 9 A L F S W c e d U2 B e1 Q b q2 w M y M B q1 x M B

Contextual Info: Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 8 gold-plated in-line leads SOT115AE D E Z p A2 1 2 3 4 5 7 8 9 A L F S W c b e d w M e1 U2 Q q2 B y M B q1 y M B

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES

Contextual Info: DAT dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY883 860 MHz, 15 dB gain push-pull amplifier Product specification Supersedes data of 1997 Apr 14 2001 Oct 31 NXP Semiconductors Product specification 860 MHz, 15 dB gain push-pull amplifier FEATURES BGY883

Contextual Info: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology

U3405

Contextual Info: w .c ong COM Express Basic Module ate c.co m conga-BE57 Maximum Computing Performance Formfactor COM Express Basic, 95 x 125 mm , Type II Connector Layout Processor Intel® Core™ i7-610E, 2.53 GHz (32 nm process, 4MB cache, 1066 MHz, TDP 25 W, BGA package)

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification Supersedes data of 2000 Feb 14 2001 Oct 22 NXP Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier FEATURES

72125

Contextual Info: BGO827; BGO827/FC0; BGO827/SC0 870 MHz optical receivers Rev. 5 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC

14433

Abstract: philips catv line amplifier BGE788 DIN45004B
Contextual Info: BGE788 750 MHz, 34 dB gain push-pull amplifier Rev. 04 — 30 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V DC . The module consists of two cascaded stages both in cascode

CGY1047

Contextual Info: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

4425 B

Contextual Info: PDF: 2004 Feb 05 Philips Semiconductors Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; optical input; 8 gold-plated in-line leads N D N1 N2 E S2 SOT115T Z p

SOT-115J

Abstract: SOT115J
Contextual Info: PDF: 2004 Feb 05 Philips Semiconductors Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S

Contextual Info: 1 2 3 5 7 8 9 BGE787B 750 MHz, 29 dB gain push-pull amplifier Rev. 4 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V DC in a SOT115J package. The module consists of two cascaded stages both in cascode