03OCT2012 Search Results

Contextual Info: STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features Order code VDSS RDS on max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb

Contextual Info: STGW40H120DF2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A • 5 s minimum short circuit withstand time at

STGW40H120DF2

Abstract: STGW40H120 GW40H120DF2
Contextual Info: STGW40H120DF2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)

STGP20H60DF

Abstract: STGB20H60DF
Contextual Info: STGB20H60DF STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

IFP260

Abstract: STGW30H60DF GP30H STGB30H60DF STGF3
Contextual Info: STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 1 D²PAK 2 • Safe paralleling • Low thermal resistance

Contextual Info: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

RAD SMD MARKING CODE

Abstract: smd diode marking code TO3
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

STGW40H120DF2

Contextual Info: STGW40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

SPC563M64L5

Abstract: SPC563M64L7 BOSCH 227 100 142 sck 20150
Contextual Info: SPC563M64L5, SPC563M64L7 SPC563M60L5P, SPC563M60L7P 32-bit Power Architecture based MCU for automotive powertrain applications Datasheet − production data Features • 144 LQFP 20 mm x 20 mm Single issue, 32-bit Power Architecture® Book E compliant e200z335 CPU core complex

l3gd20

Abstract: mems gyro automotive kalman gyro applications of arm processor mems gyroscope cortex-m3 processor
Contextual Info: STEVAL-MKI127V1 Ultra stable 3-axis gyro based on the L3GD20 Data brief Features • USB / PC connection for setup and upgrade USB and/or UART connection ■ Ultra stable over temperature and time ■ Operational temperature: -30 °C to +85 °C ■ ST L3GD20 MEMS rate sensor

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC GP ALL RIGHTS RESERVED. BY - REVISIONS DIST 00 P LTR A DESCRIPTION DATE RELEASED PER ECO-13-005370 DWN APVD CJV 01APR2013 MRS D D 5 C C 2 3 B B 1 1 2227288-1 HEATSINK ASSEMBLY

Contextual Info: STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features Order code VDSS RDS on max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb

st smd diode marking to3

Abstract: 0301 smd STRH40N6SG
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications

Contextual Info: M95320-A125 M95320-A145 Automotive 32-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) 2 x 3 mm

Contextual Info: VN7040AS-E VN7040AJ-E High-side driver with MultiSense analog feedback for automotive application Datasheet - production data 62  "1($'5 – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Loss of ground and loss of VCC

ICE40 FPGA

Abstract: ICE40LP1K-CM121 ICE40LP1K ice40lp 225ba ICE40LP1K-CM36 ICE40
Contextual Info: iCE40 LP Series Ultra Low-Power FPGA Family October 03, 2012 1.32 Figure 1: iCE40 LP-Series Family Architectural Features LP-Series - optimized for low power Ultra-small footprints Proven, high-volume 40 nm, low-power CMOS technology I/O Bank 0 I/O Bank 1

GF20H60DF

Abstract: STGF20H60DF GP20H
Contextual Info: STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 2 1 TO-220 2 TO-220FP • Safe paralleling • Low thermal resistance

Contextual Info: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

STGB20H60DF

Abstract: GF20H60DF STGF20H60DF
Contextual Info: STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 2 1 TO-220 2 TO-220FP • Safe paralleling • Low thermal resistance

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

STGP30H60DF

Abstract: GP30H60DF STGB30H60DF
Contextual Info: STGB30H60DF STGP30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

GW25

Abstract: STGW25H120DF2
Contextual Info: STGW25H120DF2 1200 V, 25 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)

st marking

Abstract: STGW15H120DF2 GW15H120DF2
Contextual Info: STGW15H120DF2 1200 V, 15 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)