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    STGW25H120DF2 Search Results

    STGW25H120DF2 Datasheets (1)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGW25H120DF2
    STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT H-SERIES 1200V 25A TO-247 Original PDF 723.83KB
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    STGW25H120DF2 Price and Stock

    STMicroelectronics

    STMicroelectronics STGW25H120DF2

    Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
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    STGW25H120DF2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GW25

    Abstract: STGW25H120DF2
    Contextual Info: STGW25H120DF2 1200 V, 25 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)


    Original
    stgw25h120df2o-247gw25 PDF

    Contextual Info: STGW25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A


    Original
    stgw25h120df2o-247docid023752 PDF

    Contextual Info: STGW25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A


    Original
    stgw25h120df2o-247docid023752 PDF

    Contextual Info: STGW25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A


    Original
    stgw25h120f2o-247sc12850docid026003 PDF