STGW25H120DF2 Search Results
STGW25H120DF2 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STGW25H120DF2 | STMicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT H-SERIES 1200V 25A TO-247 | Original | 723.83KB |
STGW25H120DF2 Price and Stock
STMicroelectronics STGW25H120DF2Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 |
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STGW25H120DF2 | Tube | 22 Weeks | 600 |
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STGW25H120DF2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
GW25
Abstract: STGW25H120DF2
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Original |
stgw25h120df2o-247gw25 | |
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Contextual Info: STGW25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A |
Original |
stgw25h120df2o-247docid023752 | |
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Contextual Info: STGW25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A |
Original |
stgw25h120df2o-247docid023752 | |
|
Contextual Info: STGW25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A |
Original |
stgw25h120f2o-247sc12850docid026003 |