03NOV2005 Search Results

block diagram for RF transmitter AND RECEIVER doc

Abstract: BPSK ST19NR66 AES-128 iso 3309 eeprom st
Contextual Info: ST19NR66 Dual contactless smartcard MCU with 66 Kbytes high density EEPROM, enhanced RF performances and dedicated packages Features Hardware features • Enhanced 8-bit CPU core with extended addressing modes ■ 224 Kbytes User ROM ■ 6 Kbytes User RAM

S1045

Abstract: STPS1045B-TR STPS1045B tube 6085 DSASW003744
Contextual Info: STPS1045B Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Low capacitance ■ High reverse avalanche surge capability ■ Avalanche specification K K A A DPAK Description High voltage dual Schottky rectifier suited for

STPS5H100H

Abstract: STPS5H100 S5H100 STPS5H100B JESD97 STPS5H100B-TR
Contextual Info: STPS5H100 High voltage power Schottky rectifier Main product characteristics K IF AV 5A VRRM 100 V Tj (max) 175° C VF(max) 0.61 V K A A K NC Features and benefits DPAK STPS5H100B • Negligible switching losses ■ High junction temperature capability ■

Contextual Info: PD57060-E PD57060S-E RF Power Transistors The LdmoST Plastic FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 14.3 dB GAIN @ 945MHz 28V ■ NEW RF PLASTIC PACKAGE ■ IN COMPLIANCE WITH THE 2002/93/EC

ST19NR66

Abstract: AES-128
Contextual Info: ST19NR66 Dual contactless smartcard MCU with 66 Kbytes high density EEPROM, enhanced RF performances and dedicated packages Features Hardware features • Enhanced 8-bit CPU core with extended addressing modes ■ 224 Kbytes User ROM ■ 6 Kbytes User RAM

HD1760JL

Abstract: JESD97 HD1760
Contextual Info: HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features • State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 ■ Wide range of optimum drive conditions ■ Stable performance versus operating

817a

Abstract: transistor marking 551 sot-89 STMicroelectronics marking code date sot-89 N817A P025H STF817A 817A RELAY SOT-173 package JESD97 STN817A
Contextual Info: STN817A STF817A PNP MEDIUM POWER TRANSISTOR General features • SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING 2 Description 1 The STF817A - STN817A are PNP transistor manufactured using Planar Technology resulting

Contextual Info: STPS1045B Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Low capacitance ■ High reverse avalanche surge capability ■ Avalanche specification K K A A DPAK Description High voltage dual Schottky rectifier suited for

TO-264

Abstract: HD1760JL JESD97
Contextual Info: HD1760JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Features • STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING

s5h100

Abstract: STPS5H100 JESD97 STPS5H100B STPS5H100B-TR
Contextual Info: STPS5H100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 5A VRRM 100 V Tj 175°C VF(max) 0.61 V K A NC DPAK FEATURES AND BENEFITS • ■ ■ ■ ■ Negligible switching losses High junction temperature capability Low leakage current

S5H100

Abstract: STPS5H100
Contextual Info: STPS5H100 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 5A VRRM 100 V Tj 175°C VF(max) 0.61 V K A NC DPAK FEATURES AND BENEFITS • ■ ■ ■ ■ Negligible switching losses High junction temperature capability Low leakage current

W75N20

Abstract: stp75n20 P75N20
Contextual Info: STB75N20 STP75N20 - STW75N20 N-CHANNEL 200V - 0.028Ω - 75A - D²PAK - TO-247 - TO-220 LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB75N20 STP75N20 STW75N20 200 V 200 V 200 V <0.034Ω <0.034Ω <0.034Ω 75 A

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. D RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 0.048 2 - LOC DIST AG 67 R E V IS IO N S P LTR A DESCRIPTION DATE 31JAN06 REVISED PER E C O -0 6 -0 0 1 742 DWN APVD JDP JGH D MATERIALS:

PD57060s

Abstract: PD57060S-E 700B AN1294 PD57060 PD57060-E PD57060STR-E PD57060TR-E PowerSO-10RF marking
Contextual Info: PD57060-E PD57060S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 14.3dB gain @ 945MHz / 28V ■ New RF plastic package

transistor marking 551 sot-89

Abstract: 817A RELAY STF817A sot-89 marking ct
Contextual Info: STN817A STF817A PNP MEDIUM POWER TRANSISTOR General features • SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING Description 1 The STF817A - STN817A are PNP transistor manufactured using Planar Technology resulting

Contextual Info: STPS5H100 High voltage power Schottky rectifier Main product characteristics K IF AV 5A VRRM 100 V Tj (max) 175° C VF(max) 0.61 V K A A K NC Features and benefits DPAK STPS5H100B • Negligible switching losses ■ High junction temperature capability ■

Contextual Info: PD57060-E PD57060S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 14.3dB gain @ 945MHz / 28V ■ New RF plastic package

P75N20

Contextual Info: STB75N20 STP75N20 - STW75N20 N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STB75N20 200V <0.034Ω 75A 3 1 STP75N20 200V <0.034Ω 75A STW75N20 200V <0.034Ω 75A •

s1045

Abstract: STPS1045B Date Code Marking STMicroelectronics STMicroelectronics marking code date STPS1045B-TR S10-45
Contextual Info: STPS1045B POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 10 A VRRM 45 V Tj 175°C VF(max) 0.57 V K K A A DPAK FEATURES AND BENEFITS • ■ ■ ■ ■ Negligible switching losses Low forward drop Low capacitance High reverse avalanche surge capability

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D C a B [.2 3 5 ] A AMP 1471-9 REV 31MAR2000 2 1 LOC DIST R E V IS IO N S 00 HM DESCRIPTION K' D IM E N S IO N S O T H E R W IS E M A T E R IAD:

PD57060S-E

Abstract: PD57060s 700B AN1294 J-STD-020B PD57060 PD57060-E PD57060STR-E PD57060TR-E
Contextual Info: PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 14.3dB gain@ 945 MHz/28 V ■ New RF plastic package Description

Contextual Info: PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 14.3dB gain@ 945 MHz/28 V ■ New RF plastic package Description

HD1760JL

Abstract: JESD97
Contextual Info: HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features • State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 ■ Wide range of optimum drive conditions ■ Stable performance versus operating