03MAR2014 Search Results

Contextual Info: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA50JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

24N60DM2

Contextual Info: STF24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − preliminary data Features Order code VDS @ TJmax RDS on max ID STF24N60DM2 650 V 0.20 Ω 18 A • Extremely low gate charge and input

STGW15H120F2

Contextual Info: STGW15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

L99PM72GXPTR

Contextual Info: L99PM72GXP Advanced power management system IC with embedded LIN and high speed CAN transceiver supporting CAN Partial Networking Datasheet − production data • 5 fully protected high-side drivers with internal 4-channel PWM generator • 2 low-side drivers with active Zener clamping

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 19 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION REV; EC0-14-003089 G 61.14 [ 2.41 95.07 0.12 [ 3.743 .005 ] 0.5 .02 ] 8 6-19 SELF-TAPPING SCREW 4 REQUIRED 8 COVER

GA50JT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: GA50JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT06-CAL.

stgw40v60d

Abstract: GW40V60DF
Contextual Info: STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A

VS-705

Abstract: VCSO VS705
Contextual Info: VS-705 Single Frequency VCSO Features • Industry Standard Package, 5.0 x 7.5 x 2.5 mm  5 Generation ASIC Technology for Ultra Low Jitter 120 fs-rms fN = 622.08 MHz, 12 kHz to 20 MHz 105 fs-rms (fN = 622.08 MHz, 50 kHz to 80 MHz) th  Output Frequencies from 122.88 MHz to 1.00 GHz

Contextual Info: ALED1642GW 16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications Datasheet - production data Description The ALED1642GW is a monolithic, low voltage, low current power 16-bit shift register designed for

Contextual Info: STM8AL31xx, STM8AL3Lxx Automotive 8-bit ultra-low-power MCU, up to 32 Kbytes Flash, RTC, data EEPROM, LCD, timers, USART, I2C, SPI, ADC, DAC, COMPs Datasheet - production data Features • Operating conditions – Operating power supply range 1.8 V to 3.6 V down to 1.65 V at power down

Contextual Info: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost

Contextual Info: STD80N4F6 Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet − production data Features TAB Order code VDS RDS on max ID STD80N4F6 40 V 6 mΩ 80 A • Designed for automotive applications and

13N60M2

Abstract: 13N60 STFI13N60M2
Contextual Info: STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A STF13N60M2 STFI13N60M2 • Extremely low gate charge

Contextual Info: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A

Contextual Info: ALED1642GW 16 channel LED driver with error detection, current gain control and 12/16-bit PWM brightness control for automotive applications Datasheet - production data Description The ALED1642GW is a monolithic, low voltage, low current power 16-bit shift register designed for

13n60

Contextual Info: STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A STB13N60M2 TAB STD13N60M2 TAB 3 D2PAK

Contextual Info: L6235 DMOS driver for 3-phase brushless DC motor Datasheet - production data Features • Operating supply voltage from 8 to 52 V  5.6 A output peak current 2.8 A DC  RDS(ON) 0.3  typ. value at Tj = 25 °C  Operating frequency up to 100 KHz  Non-dissipative overcurrent detection and

TDA7577

Abstract: TDA7577BLV
Contextual Info: TDA7577BLV 2 x 75 W dual-bridge power amplifier with I2C complete diagnostics and "start-stop" profile 6 V operation Datasheet - production data Description '!0'03 '!0'03 PowerSO36 (slug-up) Flexiwatt27 (vertical) '!0'03 '!0'03 Flexiwatt27 (horizontal)

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 510 MHz 8.0 VDC Lower Frequency: Upper Frequency: 790 Tuning Voltage: 1.0 Supply Voltage: 7.75 8.0 8.25 VDC Output Power: +2.0 +5.5 +9.0 dBm Supply Current: MHz 20 nd