03AP8 Search Results

Contextual Info: DO NOT SCALE □ ATE SYM AUTH 22JN87 A PART NO WAS PE009834 & RELEASED 03AP89 Al ADDED 12.5*0.5: ADDED NOTE *2 REVISION RECORD DR CK 870005 DJT FH 125961 JD JD NUT - S.A.E. I2LI5 S T E E L O i— i -f zz. i— i o > p < cc o to OC.ÌZ, o o ox cr °o SECTION

PHB110NQ08T

Contextual Info: PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

8S0005

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM 28MR8S DO NOT SCALE m m m m REVISION RECORD AUTHORITY DR CK

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM 01AUS0 □R AUTHORITY CK 8<]0005 DBB DBB 134425 BKD JC 135770 AfU A H

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM 28MR8S DO NOT S C A LE REVISION RECORD 01AU06 CK 3^0005 DBB DBB

PHP110NQ08T

Contextual Info: PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: 24 23 21 22 20 19 17 18 16 15 14 12 13 11 10 7 8 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. (2X3) 2X 1.2 ±0.3 M CD TOTAL NO OF INSPECTIONS REQUIRED

12927

Abstract: PHB110NQ08T PHP110NQ08T
Contextual Info: PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 — 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM 28MR8S DO NOT S C A LE m m m m 01AU06 REVISION RECORD CK 8S0005 DBB DBB

Contextual Info: 7 DO NOT SCALE 6 5 3 A 2 SYMBOL D E F I N I T I O N CD THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR T H IS DRAWING/PART NUMBER H C60-61 NUMBERS DATE SYM O8MY90 TOTAL NO. OF SYMBOLS ON DRAWING 41 LAST NO. USED 67 REVISION RECORD

PMG370XN

Contextual Info: PMG370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 13 February 2004 MBD128 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

PHD22NQ20T

Abstract: 12882
Contextual Info: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features