12927 Search Results

Contextual Info: keyword search: part number search: CDLL5938B #12927 RFQ/Sample Package Zener Voltage Regulator Diode Division Datasheet Ireland SA3-35.PDF Mil-Spec (none) Spice Data (none) Shipping TR13\5000cntTR13 Qual Data glassqual.pdf Description This surface mountable 1.5 W Zener diode series in the JEDEC

12927

Abstract: FCE57
Contextual Info: REVISIONS REV A ECN, ERN NO. PRODUCT DRAWING EAR 12927 DATE APPRD. M A R 0 7 /0 6 K .L MOUNTING CODE 0 .1 4 0 [ 3 . 5 6 ] THREADED HEX NUT 5 ORDERING CODE: PART NUM BER F C E 5 7 0 9 SERIES STYLE 09= A D A P T E R NUMBER OF CONTACTS MODIFIER -0=S TA N D A R D

multipin

Abstract: CROCODILE SET multipin connector 134417RTL
Contextual Info: 132-2012:QuarkCatalogTempNew 8/13/12 5:40 PM Page 132 TEST & MEASUREMENT 1 Test Leads and Accessories Test Leads, Kits and Accessories Test Lead Kits Test Lead Accessories 125072/B 125072/R INTERCONNECT 126009/B 129272 134417RTL 129526 ENCLOSURES Stock No.

E412

Contextual Info: Extract from the online catalog PTDA 2,5/ 4-5,0 Order No.: 1725328 The figure shows a 10-position version of the product PC terminal block, Nominal current: 24 A, Nom. voltage: 400 V, Pitch:

Contextual Info: 68 129-00 o co N° TES 1| L M a t e r i a l : NY66 UL94-V-0, GF 30°/ 2. P l a ti n g 3. P r o d u c t s Post Tin L e a d Specificatio n PlatingiSnPb 1 §0 □ g s If c 90 a ° PS-68 129-00 I B ENG NO. A B 68 129-02 11 2.5 68 129-03 1 5 68 129-04 1 7.5

intel 8250 UART

Abstract: intel 8250 master book transistor equivalent 8250 intel uart 8250 uart intel 8250 uart datasheet 6.2V Zener Diode Dallas iButton DS1990A DS1991L-F5 datasheet uart 8250
Contextual Info: APPLICATION NOTE 55 Application Note 55 Extending the Contact Range of iButtons INTRODUCTION Dallas Semiconductor iButtons are designed to operate with a contact range exceeding 100 meters. The devices require a single bidirectional bus master for communication over the 1–WireTM bus. The ideal connection between an iButtonTM and its bus master is a

PHB110NQ08T

Contextual Info: PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

BF966

Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance

TO50 package

Abstract: BF966 BF966S
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance

Contextual Info: CY2SSTV857-27 Differential Clock Buffer/Driver DDR333/PC27000-Compliant Features Description • Operating frequency: 60 MHz to 200 MHz The CY2SSTV857 is a high-performance, low-skew, low-jitter zero-delay buffer designed to distribute differential clocks in

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

PC2700-Compliant

Abstract: CDC857-2 CY2SSTV857 CY2SSTV857-27 CY2SSTV857ZC-27 CY2SSTV857ZC-27T CY2SSTV857ZI-27 CY2SSTV857ZI-27T DDR333 production drawing Y5346
Contextual Info: CY2SSTV857-27 Differential Clock Buffer/Driver DDR333/PC2700-Compliant Features Description • Operating frequency: 60 MHz to 200 MHz The CY2SSTV857-27 is a high-performance, low-skew, low-jitter zero-delay buffer designed to distribute differential clocks in high-speed applications. The CY2SSTV857-27

Contextual Info: Stiftleisten 2,54 mm Stiftleisten Lötversionen AUS. 01 | 04.2014 Originalgröße zweireihige Stiftleiste 16 Pins Katalog D 074637 2,54 mm Stiftleisten BESCHREIBUNG ALLGEMEINES Gerade und abgewinkelte Stiftleisten Bei den ERNI-Stiftleisten handelt es sich um ein- und

BF964

Abstract: BF964SA BF964S BF964SB TO50 package
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance

HMC860LP3E

Abstract: HMC820 470nF 100NF 10UF 22PF 47PF HMC820LP6CE SSW-106-01-T-D HMC820LP6C
Contextual Info: 8 7 6 5 4 3 2 1 REVISIONS REV ECN# ZONE A - - DESCRIPTION PRODUCTION RELEASE PER ECN 20100115 NAME DATE DON YOUNG 10/01/24 J6 VR3 640452-2 1 2 R24 R25 D 20K C32 C33 100NF 1NF TCXO C28 4 1 VDD FOUT VC R20 3 100NF R22 C1 10UF 2 C27 20K Header to USB Board 51

DY87

Abstract: SDI Microwave HMC82 470nF c 470nf HMC828LP6CE SSW-106-01-T-D 100NF 10UF 22PF
Contextual Info: 8 7 6 5 4 3 2 1 REVISIONS REV ECN# ZONE A - - DESCRIPTION PRODUCTION RELEASE PER ECN 20100129 NAME DATE DON YOUNG 10/01/24 J6 D 640452-2 VR3 1 R24 2 D R25 20K C32 C33 100NF 1NF TCXO +3V Y1 C28 4 VDD 1 VC FOUT R20 3 GND C30 100NF R22 20K 51 R18 100NF Header to USB Board

R823

Abstract: c 470nf HMC836 470nF SSW-106-01-T-D 100NF 10UF 22PF 47PF D20K
Contextual Info: 8 7 6 5 4 3 2 1 REVISIONS REV ECN# ZONE A - - DESCRIPTION PRODUCTION RELEASE PER ECN 20100129 NAME DATE DON YOUNG 10/01/24 J6 VR3 640452-2 1 2 R24 R25 D 20K C32 C33 100NF 1NF TCXO C28 4 1 VDD FOUT VC R20 3 100NF R22 C1 10UF 2 C27 20K Header to USB Board 51

TO50 package

Abstract: BF964S
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance

Contextual Info: P7630 30 GHz Low Noise TriMode Probe Datasheet Combining TriMode Probing with Low Noise Performance TriMode Probing enhances productivity by enabling differential, single-ended, and common mode measurements with a single probe setup. Connecting a probe to the device under test can be a time consuming

407257-1

Abstract: 164589 028-7428 03601-30 74676 0674068 141898 1606445 74127 60034
Contextual Info: Narrow Wide Plots Back to RFM Website S-Parameter Narrow "RF1172C, 7/10/02 " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " 427.411200 -.1873169, -.1873474, -.1869202, -.1868591,

BF964SA

Abstract: BF964S BF964SB TO50 package BF964
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance

Contextual Info: 10 D 7 8 s THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. PART NO. 5 6 2T 2 3 A PART NO. 1208 4170 2 1 ZONE 1208 4170

Broadband-Gain-Flattened-EDFA

Abstract: lp 1610
Contextual Info: Optical fiber am plifier Broadband Gain Flattened EDFA Supenor technology and manufacturing skills enable NEL to produce gain flattened broadband tollurite-based EDFAs In the 1 5 p m-band, a broadband gam flattened bandwidth ol 65 nm is achieved with a gain flatness less than 2 dB

DS2501 transistor

Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
Contextual Info: J Copyright 1996 by Dallas SemiconductorCorporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following: Dallas Semiconductor Corporation