M3D300 Search Results

BUK9212-55B

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7212-55B

Contextual Info: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7225-55A

Contextual Info: BUK7225-55A TrenchMOS standard level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

03nc60

Abstract: BUK7222-55A
Contextual Info: BUK7222-55A TrenchMOS standard level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

IRFR220

Contextual Info: IRFR220 N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: IRFR220 in SOT428 D-PAK .

BUK7213-75B

Contextual Info: BUK7213-75B TrenchMOS standard level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

12232

Abstract: BUK7227-100B
Contextual Info: BUK7227-100B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

10804

Contextual Info: BUK9207-30B TrenchMOS logic level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

255L1

Contextual Info: BUK9209-40B TrenchMOS logic level FET Rev. 01 — 13 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 01 — 20 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

BUK72150-55A

Contextual Info: BUK72150-55A TrenchMOS standard level FET Rev. 02 — 20 November 2003 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive GPA TrenchMOS™ technology.

Contextual Info: BUK7277-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BUK9222-55A TrenchMOS logic level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHD83N03LT

Abstract: PHD83
Contextual Info: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .

Contextual Info: BUK9277-55A TrenchMOS logic level FET Rev. 01 — 6 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

transistor BR 471 A

Abstract: PHD95N03LT 08216
Contextual Info: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .

OF TRANSISTOR AT 30B

Abstract: BUK7207-30B 03nk80
Contextual Info: BUK7207-30B TrenchMOS standard level FET Rev. 02 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK7211-55B

Abstract: 03nl03 03nl06
Contextual Info: BUK7211-55B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

BUK7226-100B

Abstract: buk7226-100
Contextual Info: BUK7226-100B TrenchMOS standard level FET Rev. 01 — 10 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

Contextual Info: BUK9237-55A TrenchMOS logic level FET Rev. 02 — 14 February 2002 M3D300 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability:

Contextual Info: BUK7208-40B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very

BUK7214-75B

Contextual Info: BUK7214-75B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

MSD060

Abstract: BUK7213-40A
Contextual Info: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.

transistor K 2333

Contextual Info: BUK9225-55A TrenchMOS logic level FET Rev. 01 — 17 April 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.