03AJ Search Results

PMV213SN

Abstract: PMV213
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

PMWD16UN

Contextual Info: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PH2925U

Contextual Info: PH2925U N-channel TrenchMOS ultra low level FET Rev. 03 — 29 November 2005 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

PMF400UN

Contextual Info: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package

PHM25NQ10T

Contextual Info: PHM25NQ10T TrenchMOS standard level FET Rev. 02 — 29 January 2003 Preliminary data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHM25NQ10T in SOT685-1 QLPAK .

MSB003

Abstract: PMV213SN
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

pmn45en

Contextual Info: PMN45EN TrenchMOS enhanced logic level FET Rev. 01 — 27 September 2002 M3D302 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN45EN in SOT457 TSOP6 .

Contextual Info: PMWD16UN Dual µTrenchMOS ultra low level FET Rev. 01 — 20 December 2002 Product data M3D647 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

PMWD15UN

Contextual Info: PMWD15UN Dual µTrenchMOS ultra low level FET M3D647 Rev. 01 — 4 February 2003 Product data 1. Product profile 1.1 Description Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

PHM12NQ20T

Abstract: MBL585 PHM12NQ20
Contextual Info: PHM12NQ20T TrenchMOS standard level FET Rev. 01 — 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHM12NQ20T in SOT685-1 QLPAK .

Contextual Info: PMWD30UN Dual µTrenchMOS ultra low level FET Rev. 01 — 22 January 2003 M3D647 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

PHB29N08T

Abstract: PHP29N08T
Contextual Info: PHP/PHB29N08T TrenchMOS standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP29N08T in SOT78 TO-220AB

BAW62

Abstract: BSH112 MO-220 PIP250M
Contextual Info: PIP250M Integrated buck converter Rev. 02 — 21 February 2003 Product data M3D797 1. Description The PIP250M is a fully integrated synchronous buck converter intended for use as a point-of-load regulator. It contains two N-channel power MOSFETs, a Schottky diode

PH3230

Abstract: SOT669-LFPAK sot669 package
Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).

NXP SMD ic MARKING CODE

Contextual Info: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

Contextual Info: PHM25NQ10T TrenchMOS standard level FET Rev. 01 — 30 May 2002 Preliminary data M3D836 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHM25NQ10T in SOT685-1 QLPAK .

Contextual Info: PIP401 OR-ing Intelligent Switch Rev. 01 — 21 June 2002 Objective data M3D323 1. Description The PIP401 OR-ing Intelligent Switch ORIS is a dedicated power OR-ing device, that combines the simplicity of a diode with the efficiency of a MOSFET switch. The intended application is parallel redundant power supply networks, where the

MSA438

Abstract: PMR400UN SC-75 12665
Contextual Info: PMR400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 3 March 2004 M3D173 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package

philips capacitor 1000uf 25V

Abstract: PHILIPS MOSFET MARKING MO-220 PIP202-12M
Contextual Info: PIP202-12M DC to DC converter powertrain Rev. 01 — 15 July 2002 Product data M3D797 1. Description The PIP202-12M is designed for use as the power output stage of a synchronous buck DC to DC converter. It contains a MOSFET control IC, two power MOSFET transistors and a Schottky diode. By combining the power MOSFETs and the driver

ultra low igss

Abstract: PMN23UN
Contextual Info: PMN23UN µTrenchMOS ultra low level FET Rev. 01 — 16 June 2004 M3D302 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • TrenchMOS™ technology

PHP29N08T

Contextual Info: PHP29N08T N-channel TrenchMOS standard level FET Rev. 02 — 12 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PHB29N08T

Contextual Info: PHB29N08T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PH2520U

Contextual Info: PH2520U N-channel TrenchMOS ultra low level FET Rev. 02 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

Contextual Info: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package