Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    03 TRANSISTOR Search Results

    03 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    03 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V


    Original
    stp100nf03l-03stb100nf03l-03stb100nf03l-03-1d2pak/i2/to-220+1o-220 PDF

    p100NF

    Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
    Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V


    Original
    stp100nf03l-03stb100nf03l-03stb100nf03l-03-1d2pak/i2/to-220+8o-220p100nfb100nf03lb100nfstb100nf03l-03t4jesd97p100nf03lisd 1720 PDF

    STB100NF03L-03

    Abstract: STB100NF03L-03-01 STB100NF03L-03-1 STP100NF03L-03
    Contextual Info: STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01 30 V 30 V 30 V <0.0032 Ω <0.0032 Ω


    Original
    stb100nf03l-03stp100nf03l-03stb100nf03l-03-1-100a+4pak/to-220stb100nf03l-03-01o-251o-263 PDF

    Q67042-S4057

    Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
    Contextual Info: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ


    Original
    spi100n03s2-03spp100n03s2-03spb100n03s2-03p-to262-3-1+5p-to263-3-2p-to220-3-1q67042-s4058pn0303q67042-s4057 PDF

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original
    spi100n03s2-03spp100n03s2-03spb100n03s2-03q67042-s4058+4q67042-s4057pn0303q67042-s4116anps071e PDF

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Contextual Info: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original
    ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+6pg-to262-3-1pg-to220-3-1a1502smd diode code gsq67065-a7009smd code g13 PDF

    32768 quartz

    Abstract: CoolRISC 816 d flip flop using gdi techniques XE8000 TQFP32 TQFP44 TQFP64 XE88LC01 XE88LC03 XE88LC05
    Contextual Info: XEMICS Data Book XX-XE88LC01/03/05 Ultra low-power mixed-signal microcontroller 300 uA at 1 MIPS 16 + 6 bits ADC 20001101 Preliminary information XX-XE88LC01/03/05, Data Book Copyright XEMICS Printed in Switzerland Date of release 03-00 03-00-0035 - Data book XX-XE88LC01-03-05


    Original
    xx-xe88lc01/03/05xx-xe88lc01-03-05xe800032768 quartz+8coolrisc 816d flip flop using gdi techniquestqfp32tqfp44tqfp64xe88lc01xe88lc03xe88lc05 PDF

    CF001-03

    Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
    Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original
    03-apr-08cf001-03mil-std-750cf001-03-000x+9cfa0103alow noise x band hemt transistorcfb0103cfb0103-bcfb0103bcfs0103-sbcfa0103-amimix broadbandcf001 PDF

    2n0303

    Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
    Contextual Info: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance


    Original
    spi80n03s2-03spp80n03s2-03spb80n03s2-03q67040-s4247+9q67040-s42582n0303q67042-s4079infineon part markingsmd diode 2420smd marking code transistorsmd transistor marking code tctransistor vds rds 12 id 80a to220anps071e PDF

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Contextual Info: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original
    ipi100n06s3-03ipp100n06s3-03ipb100n06s3-033pn0603+3bipp100n06s3-03infineon smd part markinganps071e PDF

    Q67042-S4057

    Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode ID  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance max. SMD version P- TO262 -3-1 V m


    Original
    spi100n03s2-03spp100n03s2-03spb100n03s2-03q67042-s4058+3q67042-s4057q67042-s4116pn0303 PDF

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Contextual Info: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original
    ipi100n06s3l-03ipp100n06s3l-03ipb100n06s3l-033pn06l03+9bipp100n06s3l-03anps071esmd diode marking 78a3pn06infineon part marking to263k transistor smd marking codeinfineon smd part markingoptimos transistorinfineon part marking PDF

    Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original
    03-apr-08cf001-03mil-std-750comm-000x PDF

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Contextual Info: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original
    ipb100n06s3-03ipi100n06s3-03ipp100n06s3-03pg-to263-3-2+7pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-87982a smd code marking3pn063pn0603 PDF

    OPP100

    Abstract: powervr 544 AM37X Jazelle v1 Architecture Reference Manual PowerVR sgx 545
    Contextual Info: AM3715/03 www.ti.com SPRS616A – JUNE 2010 – REVISED JUNE 2010 AM3715/03 Applications Processor 1 AM3715/03 Applications Processor 1.1 Features • AM3715/03 Applications Processor: – Compatible with OMAP 3 Architecture – MPU Subsystem • 1-GHz ARM CortexTM-A8 Core


    Original
    am3715/03sprs616aopp100powervr 544+3am37xjazelle v1 architecture reference manualpowervr sgx 545 PDF

    MIPI dbi

    Abstract: TI Sitara ARM MPU PowerVR sgx 545 NCS24 matrix tv m21 service mode manual AM37X 37X CUS CBC 557 B
    Contextual Info: AM3715/03 www.ti.com SPRS616B – JUNE 2010 – REVISED JULY 2010 AM3715/03 Applications Processor 1 AM3715/03 Applications Processor 1.1 Features • AM3715/03 Applications Processor: – Compatible with OMAP 3 Architecture – MPU Subsystem • 1-GHz ARM CortexTM-A8 Core


    Original
    am3715/03sprs616bmipi dbiti sitara arm mpu+6powervr sgx 545ncs24matrix tv m21 service mode manualam37x37x cuscbc 557 b PDF

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Contextual Info: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    ipb120p04p4l-03ipi120p04p4l-03ipp120p04p4l-03pg-to263-3-2+3pg-to262-3-1pg-to220-3-14p04l03 PDF

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Contextual Info: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original
    ipb100n04s3-03ipi100n04s3-03ipp100n04s3-03pg-to263-3-2+4pg-to262-3-1pg-to220-3-13pn0403gd 898 PDF

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original
    ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+7pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-879783pn06l03690 d80smd code g13 PDF

    3pn0403

    Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
    Contextual Info: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    ipb100n04s3-03ipi100n04s3-03ipp100n04s3-03pg-to263-3-2+4pg-to262-3-1pg-to220-3-13pn0403application note anps071e PDF

    3N0403

    Contextual Info: Preliminary Data Sheet IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original
    ipb80n04s3-03ipi80n04s3-03ipp80n04s3-03pg-to263-3-2+3pg-to262-3-1pg-to220-3-13n0403 PDF

    FSBB30CH60C

    Abstract: AN-9044 FSBB15CH60C schematic diagram inverter air conditioner FSBB20CH60C pneumatic system used in train heat sink design guide, inverter, water cooling IGBT INVERTER CIRCUIT FSBB20CH60CT COMPONENT REQUIRED FOR MAKING MINI INVERTER
    Contextual Info: V4 Mini DIP SPM Application Note 2008-03-03 Application Note AN-9044 Smart Power Module Motion-SPM in Mini DIP SPM Ver.4 User’s Guide Written by: BokKeun Song JongMu Lee SooHyuk Han GuHo Jung Motion Control System HV FPG FAIRCHILD SEMICONDUCTOR 2008-03-03


    Original
    an-9044fsbb30ch60cfsbb15ch60cschematic diagram inverter air conditioner+6fsbb20ch60cpneumatic system used in trainheat sink design guide, inverter, water coolingigbt inverter circuitfsbb20ch60ctcomponent required for making mini inverter PDF

    PN03L03

    Abstract: Q67042-S4055 40h120 ANPS071E SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4056
    Contextual Info: SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.7 mΩ ID 100 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2


    Original
    spi100n03s2l-03spp100n03s2l-03spb100n03s2l-03q67042-s4056+5q67042-s4055pn03l03q67042-s409440h120anps071e PDF

    SD1135-03

    Contextual Info: SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS . . 150 MHz 7.5 VOLTS COMMON EMITTER P OUT = 2.5 W MIN. WITH 11.0 dB GAIN .280 4LSL M123 epoxy sealed ORDER CODE SD1135-03 BRANDING 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon


    Original
    sd1135-03 PDF