03 TRANSISTOR Search Results

p100NF

Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V

STB100NF03L-03

Abstract: STB100NF03L-03-01 STB100NF03L-03-1 STP100NF03L-03
Contextual Info: STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01 30 V 30 V 30 V <0.0032 Ω <0.0032 Ω

Q67042-S4057

Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ

CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

3PN0603

Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
Contextual Info: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V

A SMD CODE MARKING

Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
Contextual Info: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow

3PN0403

Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
Contextual Info: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1

3pn06l03

Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow

pn03l03

Abstract: Q67042-S4094 SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4055
Contextual Info: Preliminary data SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P-TO262-3-1 VDS 30 RDS(on) max. SMD version 2.7 m
ID 100 A P-TO263-3-2

transistor 2n5088

Abstract: 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistor

cbb60

Abstract: ic 6116 ram
Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505C – FEBRUARY 2008 – REVISED FEBRUARY 2009 1 OMAP3515/03 Applications Processor • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • 600-MHz ARM Cortex™-A8 Core

PowerVR tile

Abstract: PowerVR matrix tv m21 service mode OMAP3503 OMAP3515 hamming code 512 bytes
Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505C – FEBRUARY 2008 – REVISED FEBRUARY 2009 1 OMAP3515/03 Applications Processor • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • 600-MHz ARM Cortex™-A8 Core

block diagram i3 processor

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505C – FEBRUARY 2008 – REVISED FEBRUARY 2009 1 OMAP3515/03 Applications Processor • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • 600-MHz ARM Cortex™-A8 Core

Contextual Info: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

spice gummel

Abstract: bfp840 Germanium Transistor LNA ku-band
Contextual Info: BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

s-PBGA-515

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

66234

Abstract: 4N47 4N48 4N49 66234-001 314C-2
Contextual Info: 66234 FOUR CHANNELS, HERMETIC 16 DUAL-IN-LINE, OPTICALLY COUPLED ISOLATOR MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/03/03 Features: Applications: • • • • • • • • • • • High Reliability Base lead provided for conventional transistor

BFP840F

Abstract: Germanium Transistor spice gummel LNA ku-band
Contextual Info: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

graphic lcd panel fpga example

Abstract: GPMC OMAP NAND
Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core

t2d44

Abstract: 09 03 296 6421 SDRC GPMC OMAP NAND A7W15 OMAP3503 OMAP3515 ITU-R BT.656 to jpeg TIP 36 transistor
Contextual Info: OMAP3515/03 Applications Processor www.ti.com SPRS505F – FEBRUARY 2008 – REVISED SEPTEMBER 2009 1 OMAP3515/03 Applications Processor 1.1 Features • • • OMAP3515/03 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core