03 07 QFN 3X3 Search Results

Contextual Info: ABX2005/06/07/08/09 Low Phase Noise XO with multipliers for 100-200MHz Fund or 3rdOT Xtal Universal Low Phase Noise IC’s PIN CONFIGURATION (Top View) XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 XIN 13 XOUT 14 SEL2^ 15 OE 16 12 11 10 GND CLKC VDD CLKT GND GND

Contextual Info: ABV2005/-06/-07/-08/-09 Low Phase Noise VCXO with multipliers for 100-200MHz Fund Xtal XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 VCON 7 GND 8 DESCRIPTION SEL 14 SEL2^ 15 OE 16 GND CLKC VDD CLKT GND GND 11 10 9 8 GND 7 CLKC 6 VDD 5 CLKT 1 2 3 4 GND ABV200x OUTPUT ENABLE LOGICAL LEVELS

Contextual Info: PL602-35/-37/-38/-39 750kHz – 800MHz Low Phase Noise Multiplier XO Universal Low Phase Noise IC’s FEATURES 1 XIN 2 XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 1 6 1 5 1 4 1 3 1 2 1 1 1 SEL0^ SEL1^ GND CLKC VDD CLKT GND 9 GND VDD / GND* SEL0^ / VDD* SEL1^ TSSOP-16L

PL602-37

Abstract: PL602-35QC-R P602-39 PL602-39OC-R
Contextual Info: PL602-35/-37/-38/-39 750kHz – 800MHz Low Phase Noise Multiplier XO Universal Low Phase Noise IC’s FEATURES 1 XIN 2 XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 1 6 1 5 1 4 1 3 1 2 1 1 1 SEL0^ SEL1^ GND CLKC VDD CLKT GND GND 9 VDD / GND* SEL0^ / VDD* SEL1^ TSSOP-16L

datasheet for 4x4 keypad

Abstract: datasheet keypad 4x4 KEYPAD 4 X 4 features keypad 4x4 CM2500-05 CM2500-05QF SW11 CMOS Multiplexer
Contextual Info: CM2500-05 CMOS Multiplexer for Keypad Switches Features Product Description • • • • • • The CM2500-05QF is a CMOS multiplexer for keypad switches. The device is functionally equivalent to a fivediode pair network. However, each channel in this network has virtually no voltage drop from input to output

CHU4164-QEG

Abstract: "UP Converter" 2loif U4164 AN0017 MO-220
Contextual Info: CHU4164-QEG RoHS COMPLIANT 17-27GHz Up Converter GaAs Monolithic Microwave IC in SMD package Description The CHU4164-QEG is an I/Q up converter, which integrates a balanced cold fet mixer, and a time two multiplier. It is designed for a wide range of applications,

Contextual Info: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA3667aQDG

Abstract: AN0017 MO-220 7-18GHz 7-20GHz qfn 88 718G CHA3667 QFN 64 PACKAGE rth
Contextual Info: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

transistor smd qe

Abstract: P1020 15MPA0566 CMM1118-QT XP1020-QE XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN P1020-QE January 2007 - Rev 26-Jan-07 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs

5gHz SMD RF Mixer

Abstract: AN0017 8GC2
Contextual Info: CHR3663-QEG RoHS COMPLIANT 17-24GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package Description The CHR3663-QEG is a multifunction part, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control.

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing

B1007-QT

Abstract: B1007 XB1007-QT
Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT September 2007 - Rev 15-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias

R3664

Abstract: AN0017
Contextual Info: CHR3664-QEG RoHS COMPLIANT 17-27GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package Description The CHR3664-QEG is a multifunction part, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control. It is designed for a wide range

B1008-QT

Abstract: XB1008-QT
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

QFN50P3X3-16P

Abstract: QFN50 smd transistor marking j6 F QFN 3X3 smd code v2 smd marking code j6 ke marking transistor smd marking KE J842 03 07 qfn 3x3
Contextual Info: 5 4 3 2 1 13 11 9 7 5 3 1 13 11 9 7 VDD 5 3 V2 1 V1 B C4 DNI 9 GND 5 1M R1 1M C3 DNI C2 DNI 2 J6 SMASM 1 C1 DNI Unlabeled Test Line UNLESS OTHERWISE SPECIFIED DIMENSIONS AND TOLERANCES ARE IN INCHES AND APPLY TO THE FINISHED PART TOLERANCES ARE: FRACTIONS

QFN "100 pin" PACKAGE

Abstract: JEDEC qfn tape QFN 3x4 SOT23 JEDEC standard orientation MP transistor SOIC16 SOIC24 SOIC28 TSSOP16 TSSOP28
Contextual Info: Tape & Reel Packaging for Automated Handling The Future of Analog IC Technology General Overview Surface mount products are available in Tape & Reel packaging. Below is a table of standard Tape & Reel configurations. These packages conform to EIA-481-1/2/3 and JEDEC standards. All products are lead

XB1008-QT-0G0T

Abstract: B1008-QT XB1008-QT XB1008-QT-0G00 XB1008-QT-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT August 2008 - Rev 17-Aug-08 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

xp1080

Abstract: XB1014-QT-0G0T XB1014-QT
Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT January 2011 - Rev 10-Jan-11 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT December 2009 - Rev 10-Dec-09 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

XB1014-QT

Abstract: VD-12
Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT January 2010 - Rev 22-Jan-10 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

B1008-QT

Abstract: XB1008-QT XB1008-QT-0G00 XB1008-QT-0G0T XB1008-QT-EV1
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT November 2009 - Rev 07-Nov-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias

CHA3664-QAG

Abstract: CHA3664 fop 630 8 pin SMD s12
Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power p-HEMT process: 0.25µm gate length, via holes

fop 630

Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes