Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CHA3664 Search Results

    CHA3664 Datasheets (1)

    United Monolithic Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CHA3664-QAG
    United Monolithic Semiconductors 5-21GHz Driver Amplifier Original PDF 320.67KB 8

    CHA3664 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fop 630

    Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
    Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes


    Original
    CHA3664-QAG 5-21GHz CHA3664-QAG 5-21GHz 16L-QFN3x3 120mA DSCHA3664-QAG7333 fop 630 CHA3664 smd 1513 sas 560 PDF

    Contextual Info: CHA3664-QAG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


    Original
    CHA3664-QAG 5-21GHz CHA3664-QAG A3664 5-21GHz 120mA 16L-QFN3x3 DSCHA3664-QAG2262 PDF

    Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier UMS A3667A A3688A YYWWG GaAs Monolithic Microwave IC in SMD leadless package The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power


    Original
    CHA3664-QAG 5-21GHz A3688A A3667A CHA3664-QAG PDF

    CHA3664-QAG

    Abstract: CHA3664 fop 630 8 pin SMD s12
    Contextual Info: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power p-HEMT process: 0.25µm gate length, via holes


    Original
    CHA3664-QAG 5-21GHz CHA3664-QAG 5-21GHz 16L-QFN3x3 120mA DSCHA3664-QAG7333 CHA3664 fop 630 8 pin SMD s12 PDF

    PPH25X

    Contextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original
    PDF