02SEP09 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC D IS T R E V IS IO N S ES 00 ALL RIGHTS RESERVED. p LTR HI H2 DESCRIPTIO N REV DATE ECR —07 —000 40 2 PER DWN JA N 0 8 2 0 0 7 02SEP09 REVISED PER E C O - 0 9 - 0 2 0 6 8 9

1734737-2

Contextual Info: 4 3 COPYRIGHT 2009 BY TYCO ELECTRONICS CORPORATION. 1 2 RELEASED FOR PUBLICATION TH IS DRAWING IS UNPUBLISHED. R E V ISIO N S LOC ALL RIGHTS RESERVED. DW P LTR A 11.90 DESCRIPTIO N DWN DATE FY WK 02SEP09 R E V IS E D . E C R — 0 9 — 0 1 4 7 8 5 3.3

YR40862

Abstract: U55B
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ REVISIONS DIST 16 AV2 REF .531 .328 2 16 V IE W REVISED PER E C O - 06- 018704 05SEP2006 MC JH REV PER 02SEP09 KK AEG ECO —09 —021 8 2 6

ga200sa60up

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)

a50fk

Abstract: mosfet 440 mhz
Contextual Info: FC40SA50FKP Vishay High Power Products Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS on

HFA16TA60CS

Abstract: IRFP250
Contextual Info: HFA16TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

HFA15TB60S

Abstract: IRFP250
Contextual Info: HFA15TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

HFA08TB120S

Contextual Info: HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

farsi

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 3 R E LE A S E D FO R P U B LIC A T IO N BY 1 T C 0 ELEC TR O N IC S C O RPO RATIO N . 2 -, - A L L R IG H T S R E S E R V E D . AD R EVIS IO NS 00 D E S C R IP T IO N EC 0G3C 0 7 3 4 04 l 8DEC04

AEG 3590

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R P U B L IC A T IO N ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S R IG H T S - , - RESERVED. C O R P O R A T IO N . 0. 38[. 01 5] TYP AT POST TIPS D A A A A A A A A nunununurr n r lr lr iJ n

LC370WUD

Abstract: t260xw02 LG LVDS ltm240m1-l01 lm201u05 M190EN03 T296XW01 LM300WQ5 LG lm201u05-sla3 lvds AU Optronics
Contextual Info: Panel cable cross reference table 02-Sep-09 for ALR-1400, AVP-1600, DVS-1600, SP-1600, SVH-1920, SVX-1920 & HE series controllers New cable Original cable Panel voltage Panel Brand Panel model Panel interface 426499700-3 -3.3/5V Sharp LQ133X1TS70 LVDS 426499300-3

smd transistor b3

Contextual Info: HFA08TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

HFA30TA60CS

Abstract: IRFP250
Contextual Info: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

Contextual Info: AMP 1 4 7 1 - 9 REV 3 1 M A R 2 0 0 0 2 1 AD REV IS IO NS 00 D E S C R IP T IO N K K' 5 CONTACT IDENTIFICATION LETTER ”B” LOCATED IN THIS AREA 6 ÌA A OBSOLETE /X OBSOLETE /X OBSOLETE /X OBSOLETE /X OBSOLETE /X OBSOLETE A OBSOLETE /X OBSOLETE /X OBSOLETE

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FOR ALL C O P Y R IG H T BY 1 T C 0 rLTu i E L E C T R O N IC S -, - P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . u •0 u FL=n 000000 .52 X .08 c HOUSING SEE TABLE FOR PART NO

FA38SA50LCP

Contextual Info: FA38SA50LCP Vishay High Power Products Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance

fb180sa10p

Contextual Info: FB180SA10P Vishay High Power Products Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

Contextual Info: 1SS370 Surface Mount Switching Diode SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 200 VOLTS Features: * High Voltage, High Speed Switching Applications * Low Forward Voltage : VF = 0.9V * Fast Reverse Recovery time : trr = 60nS * Small Total Capacitance : CT = 1.5pF

smd transistor REC marking

Abstract: smd marking dt2 HFA04TB60S IRFP250 vishay smd diode code marking marking dt2 transistor smd marking HF vishay SMD REC MARKING
Contextual Info: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating temperature Compliant to RoHS directive 2002/95/EC

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 3 R E LE A S E D FO R P U B LIC A T IO N BY 1 T C 0 ELEC TR O N IC S C O RPO RATIO N . - , - A L L R IG H T S R E S E R V E D . D C C O N T A C T S A R E LA TC H ED INTO T H E P R E L O A D W IN D O W S.

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS DIST GP 00 ALL RIGHTS RESERVED. LTR DATE DESCRIPTION DWN APVD H REVISED PER ECO-08-004045 26MAR08 JDP SLB H1 REVISED PER ECQ-09-021826

Contextual Info: T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 3 R E LE A S E D FO R P U B LIC A T IO N BY 1TCO ELEC TR O N IC S C O RPO RATIO N . -, 2 - A L L R IG H T S R E S E R V E D . AD R EVIS IO NS 00 D E S C R IP T IO N EC 0G3C 0 7 6 0 04 REVISED PER E C O - 0 9 - 0 2 1

Contextual Info: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYRIG H T R E L E A S E D FO R P U B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N. U iï^LTÏÏ- J A L L R IG H T S R E S E R V E D . ir D c HOUSING SEE TABLE FOR PART NO C F i F1 Xnk XXX F1 XXX