0280D Search Results
0280D Price and Stock
Vishay Intertechnologies WSK1206R0280DEAWSK-1206 .028 .5% EA e3 - Tape and Reel (Alt: WSK1206R0280DEA) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
WSK1206R0280DEA | Tape & Reel | 18 Weeks | 4,000 |
|
Buy Now | |||||
Vishay Intertechnologies WSL2816R0280DEH- Tape and Reel (Alt: WSL2816R0280DEH) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
WSL2816R0280DEH | Tape & Reel | 20 Weeks | 2,000 |
|
Buy Now | |||||
Samtec Inc S1SS-05-28-GF-02.80-D-NUSCable Assembly Discrete Wire 0.072m 28AWG 5 POS Discrete Wire Housing to 5 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: S1SS-05-28-GF-02.80-D-NUS) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
S1SS-05-28-GF-02.80-D-NUS | Bulk | 2 Weeks, 3 Days | 1 |
|
Buy Now | |||||
|
S1SS-05-28-GF-02.80-D-NUS | 1 |
|
Buy Now | |||||||
|
S1SS-05-28-GF-02.80-D-NUS |
|
Buy Now | ||||||||
Samtec Inc S2SD-20-24-L-02.80-DR-NDXCable Assembly Discrete Wire 0.071m 24AWG 40 POS Discrete Wire Housing to 40 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: S2SD-20-24-L-02.80-DR-NDX) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
S2SD-20-24-L-02.80-DR-NDX | Bulk | 5 Weeks | 1 |
|
Buy Now | |||||
|
S2SD-20-24-L-02.80-DR-NDX | 1 |
|
Buy Now | |||||||
|
S2SD-20-24-L-02.80-DR-NDX |
|
Buy Now | ||||||||
Vishay Intertechnologies WFMA2010R0280DEKWFMA2010 .028 .5% CUMN EK e3 - Bulk (Alt: WFMA2010R0280DEK) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
WFMA2010R0280DEK | Bulk | 100 |
|
Buy Now | ||||||
0280D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
C1406Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP |
Original |
0280dc1406 | |
C1406Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP Typ. Lichtstärke: 35 mcd @ 20 mA (in TO18 |
Original |
0280dc1406 | |
|
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP |
Original |
0280d | |
HDLC32
Abstract: MPC8260 MC92460 MPC106 fly b300 TBASE10 diagram LG 21 fs 4 bg model circuits a03f
|
Original |
mc92460um/dmc92460ch370hdlc32+6 | |
0123F POWER SUPPLY
Abstract: 0880E 0830B mcu 08300 0080D 0847f fcbg AA23 AC25 IDT7172604
|
Original |
idt88k8483idt88k8483briidt88k8483bliidt88k8484+10 | |
diagram LG 21 fs 4 bg model circuits
Abstract: ABB a600 HDLC32 CMM-10 hdlc S-Class JTAG pins MC92460 MPC106 MPC8260 CRC-CCITT32
|
Original |
mc92460um/dmc92460diagram lg 21 fs 4 bg model circuitsabb a600+7 |